Solar hydrogen line emission has been observed at the frequency of 1.42 GHz (21 cm wavelength) with 3m radio telescope installed inside the University of Baghdad campus. Several measurements related to the sun have been conducted and computed from the radio telescope spectrometer. These measurements cover the solar brightness temperature, antenna temperature, solar radio flux, and the antenna gain of the radio telescope. The results demonstrate that the maximum antenna temperature, solar brightness temperature, and solar flux density are found to be 970 K, 49600K, and 70 SFU respectively. These results show perfect correlation with recent published studies.
Meta stable phase of SnO as stoichiometric compound is deposited utilizing thermal evaporation technique under high vacuum onto glass and p-type silicon. These films are subjected to thermal treatment under oxygen for different temperatures (150,350 and 550 °C ). The Sn metal transformed to SnO at 350 oC, which was clearly seen via XRD measurements, SnO was transformed to a nonstoichiometric phase at 550 oC. AFM was used to obtain topography of the deposited films. The grains are combined compactly to form ridges and clusters along the surface of the SnO and Sn3O3 films. Films were transparent in the visible area and the values of the optical band gap for (150,350 and 550 °C ) 3.1,
In this research, main types of optical coatings are presented which are used as covers for solar cells, these coatings are reflect the infrared (heat) from the solar cell to increase the efficiency of the cell (because the cell’s efficiency is inversely proportional to the heat), then the theoretical and mathematical description of these optical coatings are presented, and an optical design is designed to meet this objective, its optical transmittance was calculated using (MATLAB R2008a) and (Open Filters 1.0.2) programs
New complexes have been prepared from the new ligand [N1,N5-bis(3-hydroxyphenyl)-2- oxopentanediamide] derived from 2-Oxoglutaric acid and 3-aminophenol. Accordingly its binudear Mn(II),Co(II),Ni(II),Pd(II) and VO(II) complexes were prepared.. These compounds have been characterized by FT-IR, UV-Vis,Mass, 1H-NMR spectra, TGA curve, Chloride containing ,Molar conductance and atomic absorption. The characterization results gave binuclear complexes and pentadentate coordination and tetrahedral geometry for each Cobalt, Nickel, Manganese and Copper complexes otherwise Palladium complex gave a square planar geometry and Vanadium complex gave a square pyramidal geometry and the ligand is tetradentate. The biological activities for the new compoun
... Show MoreFabrication of solar cell prepared by thermal spray and vacuum thermal evaporation method on silicon wafer(n-type) and studying its efficiency. The film have been deposited on three layers(ZnO then CdS and CdTe) on Si and glass respectively.Direct energy gap was calculated and equal to (4.3,3.4,3)eV and indirect energy gap equal to (3.5,2.5,1.5)eV respectively . Efficiency was calculated for the cell of area 2cm2 it was equal to 0.14%.
In this paper, the solar surface magnetic flux transport has been simulated by solving the diffusion–advection equation utilizing numerical explicit and implicit methods in 2Dsurface. The simulation was used to study the effect of bipolar tilted angle on the solar flux distribution with time. The results show that the tilted angle controls the magnetic distribution location on the sun’s surface, especially if we know that the sun’s surface velocity distribution is a dependent location. Therefore, the tilted angle parameter has distribution influence.
The structural, optical and photoelectrical properties of fabricated diffusion heterojunction (HJ) solar cell, from n-type c-Si wafer of [400] direction with Boron, has been studied. AgAl alloys was used because of its properties that affect as a good connection materials. TiO2 has been used as a reflecting layer to increase the absorption radiation. The HJ has direct allowed energy gap equal to 3.1 eV. The c-Si/B HJ solar cell yielded has an active area conversion efficiency of 16.4% with an open circuit voltage of (Voc) 0.592V, short circuit current (Isc) of 2.042mA, fill factor (F.F) of 0.682 and % =10.54.