This research includes description of the x-ray diffraction, morphology and sensing measurements of SnO2 doped In2O3 thin films synthesized by pulsed laser deposition method on glass and silicon wafer substrates. In2O3:SnO2 powders were obtained by mixing In2O3 with SnO2 in the desired ratio, and calcination the at temperature 1273 K for 5 hours. SnO2 doped In2O3 thin films with different ratios (0, 0.01, 0.03, 0.05, 0.07, and 0.09% wt.) were prepared using pulsed laser deposition method. The structural investigation using X-ray diffraction revealed that the main peaks were compatible with the slandered cards of indium oxide and indium tin oxide. Atomic force microscope declared reduction of grain size by increasing of tin oxide ratio. The research imply details of samples preparation, experimental methods and results which are given and explained. In2O3:SnO2/n-Si film NH3 sensors were fabricated. The doping ratio that gave the highest sensitivity for NH3 was 5% wt.SnO2. SnO2 doped In2O3 thin films was found sensitive against NH3 at the working temperature 473K. The results showed that the sensors based on I2O3:SnO2 films revealed very short response time(13.5s) to NH3 at 3% SnO2 ratio at473Kworking temperature.
Copper zinc tin sulfide selenide, Cu2 ZnSn(S1−x Se x)4 , absorbers are promising earth-abundant and environmentally benign materials for low-cost photovoltaic applications. This study investigates the structural and optical properties of Cu 2 ZnSn(S1−x Se x)4 nanostructured thin films prepared by pulsed laser deposition using melt-quenched targets with selenium compositions x = 0.0–1.0. X-ray diffraction revealed that films with low selenium content remained amorphous, whereas higher selenium incorporation promoted the formation of polycrystalline kesterite–stannite phases with preferred orientations along (112), (200), (220), and (312). The crystallite size increased from 12.3 to 17.9 nm as selenium reached x = 1.0, indicating enha
... Show MoreThe performance of H2S sensor based on poly methyl methacrylate (PMMA)-CdS nanocomposite fabricated by spray pyrolysis technique has been reported. XRD pattern diffraction peaks of nano CdS has been indexed to the hexagonally wurtzite structured The nanocomposite exhibits semiconducting behavior with optical energy gap of4.06eV.SEM morphology appears almost tubes like with CdS/PMMA network. That means the addition of CdS to polymer increases the roughness in the film and provides high surface to volume ratio, which helps gas molecule to adsorb on these tubes. The resistance of PMMA-CdS nanocomposite showed a considerable change when exposed to H2S gas. Fast response time to detect H2S gas was achieved by using PMMA-CdS thin film sensor. The
... Show MoreThis study describes preparation a new series of tetra-dentate N2O2 dinuclear complexes Cr(III), Co(II)and Cu(II) of the Schiff base 2-[5-(2-hydroxy-phenyl)-1,3,4-thiadiazol-2-ylimino]-methyl-naphthalen-1-ol], (LH2) derived from 1-hydroxy-naphthalene-2-carbaldehyde with 2-amino-5-(2-hydroxy-phenyl)-1,3,4-thiadiazole. These ligands were characterized by FT-IR, UV-Vis, Mass spectra, elemental analysis, and 1H-NMR. All prepared complexes have been characterized by conductance measurement, magnetic susceptibility, electronic spectra, infrared spectrum, thermal Analysis (TGA), and metal analysis by atomic absorption. The stoichiometry of metal to ligand, magnetic susceptibility, and electronic spectra measurements show an octahedral geom
... Show MoreThe existing investigation explains the consequence of irradiation of violet laser on the structure properties of MawsoniteCu6Fe2SnS8 [CFTS] thin films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser. when the received films were processed by continuous red laser (700 nm) with power (>1000mW) for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time (0,30,45,60,75,90 min) respectively at room temperature.. The XRD diffraction gave polycrysta
... Show MoreBulk AlxSb1-x samples were prepared with different x ratios (0.1, 0.3, 0.5, 0.7 and 0.9) by quenching technique. This was done throughout mixing the aluminum and antimony elements according to the proper atomic weight and put them in an evacuated quartz ampoule which then sealed and heated at 1273 K for five hours and left to cool in air. Thin films of AlxSb1-xwere prepared by using thermal evaporation under vacuum of 10-5 mbar on glass substrates at room temperature with deposition rate (10-15nm/min) at thickness of ∼ 500nm. The structures of AlxSb1-x bulk and thin films have been studied by X–ray diffraction technique. The results showed that all alloys have polycrystalline structures and the p
This work focuses on the preparation of pure nanocrystalline SnO2 and SnO2:Cu thin films on cleaned glass substrates utilizing a sol-gel spin coating and chemical bath deposition (CBD) procedures. The primary aim of this study is to investigate the possible use of these thin films in the context of gas sensor applications. The films underwent annealing in an air environment at a temperature of 500 ◦C for duration of 60 minutes. The thickness of the film that was deposited may be estimated to be around 300 nm. The investigation included an examination of the structural, optical, electrical, and sensing characteristics, which were explored across various preparation circumstances, specifically focusing on varied
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