Effect of aluminum content on the structural, morphology, and electrical properties of Al<sub>1-x</sub>Sb<sub>x</sub>thin films
Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Investigation effect of ZnO content on the structural and electrical properties of pulsed laser deposited (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> thin films
Abstract<p>This research is devoted to the effect of investigation of the ZnO content on the structural and electrical properties of (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> films prepared by pulsed laser precipitation on the glass substrate at room temperature. Thin-film (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> sediments were deposited with different composition ratios where x = 0, 0.2, 0.4, 0.6 and 1.0 with a thickness of n150nm. The diffraction pattern for X-ray analysis reveals that the structure of the prepared thin films is identical with the cubic phase and hexadecimal stage of x = 0 and 0.1, respectively while the structure is mixed with the remaining x </p>
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NiO
ZnO
PLD
thin films (NiO )1-x(ZnO)x
(1)
(1)
Publication Date
Mon Jul 01 2019
Journal Name
Journal Of Physics: Conference Series
Electrical Properties of AgSb(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> Thin Films
Alloys from AgSb(SxSe1-x)2 with different compositions were prepared using quenching from the melt . This was done by put the appropriate amount of Ag, Sb,S and Se in an evaluated quartz ampoule , sealed and left at oven in temperature 1273 for 5 hours. Thin films with different composition were deposited by pulsed deposition technique PLD onto glass substrates at ambient temperature . This paper concerned on the investigate effect of composition on structural morphology, and electrical properties. The structure and morphology of the prepoared thin films were checked using X–ray diffraction and atomic force microscope. The D.C conductivity of the AgSb(SxSe1-x)2thin films with various x content was measured
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Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Effect of Germanium Content on the Optical Constants of Ge<sub>x</sub>S<sub>1-x</sub> Thin Films
Abstract<p>In this study the alloys Ge <sub>x</sub>S<sub>1-x</sub> with different Ge content (x=0, 0.1,0.2 and 0.3) wt.% have been successfully prepared by evacuated quartz tube under vacuum pressure (10<sup>−2</sup>Torr), whereas Ge xS<sub>1-x</sub> thin films were prepared by thermal evaporation technique under vacuum (10<sup>−5</sup>Torr) with (x=0,0.1,0.2 and 0.3). The optical properties measurements shows that the optical energy gap decrease from (3.4 to 3 eV) with the increase of x content, the optical constants declare significant variation with x content variation.</p>
Ge xS1-xchalcogene thin films
optical constants
energy gap.
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(4)
Publication Date
Sun Mar 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
The Influence of x ratio and Annealing Temperatures on Structural and Optical Properties for (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> Composite Thin Films Prepared by PLD
Abstract<p>Thin films of (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> composite were prepared by pulsed laser deposition technique and x ratio of 0≤ x ≤ 0.8 on clean corning glass substrate at room temperatures (RT) and annealed at 373 and 473K. The X-ray diffraction (XRD) analysis indicated that all prepared films have polycrystalline nature and the phase change from ZnO hexagonal wurtzite to CuO monoclinic structure with increasing x ratio. The deposited films were optically characterized by UV-VIS spectroscopy. The optical measurements showed that (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> films have direct energy gap. The energy band gaps of prepared thin films </p>
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(5)
Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Dielectric properties and A.C electrical conductivity analysis of (La<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub>(ZnO)<sub>x</sub>
Summery<p>The A.C conductivity of three samples of lanthanide oxide : zinc oxide (La<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub>(ZnO)<sub>x</sub> pellets with different zinc oxide content which were sintered 1273 K temperatures were studied using LRC meters in the frequency range of 50–10<sup>6</sup> Hz at temperature of 30 °C. The a.c conductivity, was analyzed depending of the universal power law proposed by Jonsher,. The slope of the relation between logarithm of a.c conductivity and angular frequency represent the s value were in the range (0.44-0.77) which found to increase by increasing of zinc oxide content which coincided with the small po</p>
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a.c conductivity
dielectric constant
(La2O3)1-x(ZnO)
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(1)
Publication Date
Tue May 12 2026
Journal Name
Canadian Metallurgical Quarterly
Publication Date
Mon Sep 01 2025
Journal Name
Iraqi Journal Of Physics
Role of Tin Oxide on the Structural, Optical and Electrical Properties of Pulsed Laser Deposited (ZnO)<sub>1-x</sub>(SnO<sub>2</sub>)<sub>x </sub>Composite Thin Films
Thin Film
Tin Dioxide
(SnO2)
Zinc Oxide (ZnO)
PLD
Optical and
Structural Properties.
This research examines the electrical, optical, and structural properties of zinc oxide (ZnO) and tin(IV) oxide (ZnO)1-x (SnO2)x composite thin films made by pulsed laser deposition, as well as the impact of composition concentration. The structural study of (ZnO)1-x (SnO2)x composites and thin films was conducted by X-ray analysis (XRD). Optical properties were investigated by UV–Vis infrared spectroscopy. The structural analysis revealed that all prepared thin-film composites were polycrystalline, exhibiting both hexagonal wurtzite and tetragonal phases for pure ZnO and SnO2, as well as a mixture of both phases for x=0.2 and 0.4. In contrast, the SnO2 phase was predominant for x=0.6 and 0.8. The increase in crystal size in the (
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(1)
Publication Date
Wed May 01 2024
Journal Name
Journal Of Physics: Conference Series
A study of the Electrical and Dialectical proprieties of S<sub>60-</sub>Se<sub>40-X</sub>-Pb<sub>X</sub>Chalcogenide Compound
Abstract<p>In this study, the melting-cooling method was used to prepare the chalcogenide compound S<sub>60</sub>-Se<sub>40-X</sub>-Pb<sub>X</sub>. Four samples were obtained by partial replacement of Selenium with Lead in the weight ratios x = 0, 10, 20, and 30, respectively. The materials were mixed separately, ground, placed in quartz ampoules, and heated to 500 degrees Celsius. After conducting several operations on the samples, their insulating properties were studied, represented by the real dielectric constant and the imaginary dielectric constant, and the electrical conductivity was measured as a function of the frequency. It was found that partial replacement plays an impo</p>
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electrical conductivity
imaginary dielectric constant
insulating properties
partial replacement
real dielectric constant
solid-state reaction
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(1)
Publication Date
Tue May 01 2018
Journal Name
Journal Of Physics: Conference Series
(31)
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Publication Date
Fri Feb 01 2019
Journal Name
Journal Of Physics: Conference Series
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