Thin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on value

In this work, a (CdO)_0.94:(In₂O₃)_0.06 film was developed on a glass substrate using Q- switching pulse laser beam (Nd:YAG; wavelength 1064 nm). The quantitative elemental analysis of the (CdO)_0.94:(In₂O₃)_0.06 thin film was achieved using energy dispersive X- ray diffraction (EDX). The topological and morphological properties of the deposited thin film were investigated using atomic force microscope (AFM) and field emission scan electron microscopy (FESEM). The I-V characteristic and Hall effect of (CdO)_0.94 :(In₂O₃)_0.06 thin films were used  to  study the electrical properties. The gas sensor prope

       In this paper, investigations were carried out on the effects of simultaneous partial substitution of Tl at the Hg site on the physical properties of an Hg_1-xTl_xBa₂Ca₂Cu₃O_8+δ cuprate superconductor with x= 0, 0.1, 0.2, 0.3 and 0.4. Two steps of the solid state reaction method were used to prepare samples in capsule. The results showed that the optimum sintering temperature was equal to 850 ^ᵒC and the sintering time was equal to 20 h for the prepared samples.  

    The best conditions for constitution and stabilization of the high T_c phase-1223 were obtained by investigating the e