Thin films of pure and doped nano titanium dioxide (TiO2) were prepared using a chemical pyrolysis technique (CPS), with different nanosize graphene oxide (GO) concentrations in the range (3-9)wt%. The structural, morphological andoptical characteristics of these films were investigated. X-ray diffraction (XRD) technique measurements revealed that the structure properties of TiO2have polycrystalline structure with anatase phase. AFM analysis showed the grain size of TiO2 films with different concentrations was decreased after doping with high concentration of GO ratio. Roughness of these films decreased too after adding of GO impurity for all films from (7.65-5.6)nm except 5wt% percentage where increased to 13.7nm. Optical properties of TiO2are affected by stimulants of GO, where the refractive index and the real part dielectric constant decrease, while the extinction coefficient and the imaginary dielectric constant increase after continuous addition of GO up to 7wt% and then increases with an increase in the further percentage of impurities. Energy gap values decreased after doping up to 7wt% with GO where the values lies in the range was 3.31 to 3.2eV while arrived to 3.49eV with more increasing of impurity percentage.
This research includes description of the x-ray diffraction, morphology and sensing measurements of SnO2 doped In2O3 thin films synthesized by pulsed laser deposition method on glass and silicon wafer substrates. In2O3:SnO2 powders were obtained by mixing In2O3 with SnO2 in the desired ratio, and calcination the at temperature 1273 K for 5 hours. SnO2 doped In2O3 thin films with different ratios (0, 0.01, 0.03, 0.05, 0.07, and 0.09% wt.) were prepared using pulsed laser deposition method. The structural investigation using X-ray diffraction revealed that the mai
The doping process with materials related to carbon has become a newly emerged approach for achieving an improvement in different physical properties for the obtained doped films. Thin films of CuPc: C60 with doping ratio of (100:1) were spin-coated onto pre-cleaned glass substrates at room temperature. The prepared films were annealed at different temperatures of (373, 423 and 473) K. The structural studies, using a specific diffractometry of annealed and as deposited samples showed a polymorphism structure and dominated by CuPc with preferential orientation of the plane (100) of (2θ = 7) except at temperature of 423K which indicated a small peak around (2θ = 3
Thin films of (CuO)x(ZnO)1-x composite were prepared by pulsed laser deposition technique and x ratio of 0≤ x ≤ 0.8 on clean corning glass substrate at room temperatures (RT) and annealed at 373 and 473K. The X-ray diffraction (XRD) analysis indicated that all prepared films have polycrystalline nature and the phase change from ZnO hexagonal wurtzite to CuO monoclinic structure with increasing x ratio. The deposited films were optically characterized by UV-VIS spectroscopy. The optical measurements showed that (CuO)x(ZnO)1-x films have direct energy gap. The energy band gaps of prepared thin films
six specimens of the Hg0.5Pb0.5Ba2Ca2Cu3-y
This paper presents a comparison study on thermal performance conic cut twist tape inserts in laminar flow of nanofluids through a constant heat fluxed tube. Three tape configurations, namely, quadrant cut twisted tape (QCT), parabolic half cut twisted tape (PCT), and triangular cut twisted (VCT) of twist ratio= 2.93 and cut depth= 0.5 cm were used with 1% and 2% volume concentration of SiO2/water and TiO
... Show MoreIn this research we prepared CdS thin films by Spray pyrolysis method on a glass substrates and we study its structural , optical , electrical properties .The result of (X-Ray ) diffraction showed that all thin films have a polycrystalline structure , The relation of the transmission as a function of wavelength for the CdS films had been studied , The investigated of direct energy gap of the CdS its value is (2.83 eV). In Hall effect measurement of the CdS we find the charge carriers is p – type and Hall coefficient 1157.33(cm3/c) ,Hall mobility 6.77(cm2/v.s)
The thin films of SnO2,SnO2:TiO2 , SnO2:MoO3 , SnO2:WO3 , SnO2:Cr2O3 , and SnO2: Fe2O3 were prepared by pulsed laser deposition technique using (Nd:YAG) laser of λ=1064 nm average frequency (6) Hz and pulse duration (10 ns) under vacuum of 10 -2 mbar)deposited on glass, n-Si single crystals substrate room temperature with thickness of (100±10) nm. The structures of pure SnO2 and ,SnO2:TiO2 , SnO2:MoO3 , SnO2:WO3 , SnO2:Cr2O3 , SnO2:Co3O4 compounds were studied by X–ray diffraction .the results showed that there was red shift accompanied addition of MoO3 and TiO2 while a blue shift accompanied the addition of WoO3 , Cr2O3 , Fe2O3 to tin oxide . The gas sensing measurements of NO2 gas showed that S
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