Silver Indium Aluminum Selenium AgIn1xAlxSe2 AIAS for x=01 thin films was deposited by thermal evaporation at RT and different︣︢︡ ︠︣1thickness 100 150 and 200 nm on the glass Substrate and p2Si wafer to produce AIAS/p3Si heterojunctionsolarcell4 Structural optical electrical and photovoltaicproperties6 are investigated for the samples XRD analysis reveals that all the deposited AIAS films show polycrystalline structure without any change due to increase of thickness Average diameter and roughness calculated from AFM images shows an increase in its value with increasing thickness The optical absorbance and transmittance for samples are measured using a spectrometer type UV Visible 1800 spectra1photometer to study the energy6gap The electricalproperties7of heterojunction were obtained by IV8 dark and illuminated9 and C10Vmeasurement The ideality1 factor and the saturation2current density were calculated Under illuminated3the open circuit voltage Voc4 short circuit current density Jsc6 fill factor 6FF and quantum efficiencies were calculated The builtin potential 7Vbi carrier concentration and depletion width are measured with different9 thickness
