Engineering equipment is essential part in the construction project and usually manufactured with long lead times, large costs and special engineering requirements. Construction manager targets that equipment to be delivered in the site need date with the right quantity, appropriate cost and required quality, and this entails an efficient supplier can satisfy these targets. Selection of engineering equipment supplier is a crucial managerial process .it requires evaluation of multiple suppliers according to multiple criteria. This process is usually performed manually and based on just limited evaluation criteria, so better alternatives may be neglected. Three stages of survey comprised number of public a

Visible-light photodetectors constructed Fe2O3 were manufactured effectively concluded chemical precipitation technique, films deposited on glass substrate and Si wafer below diverse dopant (0,2,4,6)% of Cl, enhancement in intensity with X-ray diffraction analysis was showed through favored orientation along the (110) plane, the optical measurement presented direct allowed with reduced band gap energies thru variation doping ratio , current–voltage characteristics Fe2O3 /p-Si heterojunction revealed respectable correcting performance in dark, amplified by way of intensity of incident light, moreover good photodetector properties with enhancement in responsivity occurred at wavelength between 400 nm and 470 nm.

Silicon nitride nanostructures were prepared by reactive sputtering technique using silicon targets with different types of electrical conductivity (n-type and p-type) and Ar:N2 gas mixing ratio of 70:30. The optical microscopy and spectroscopic characteristics of these films were determined in order to introduce the effect of target conductivity type on these characteristics. The results showed that using p-type silicon target would produce Si3N4 films with lower tendency to adsorb water vapor and other constituents of the atmospheric air, higher absorbance in the visible range 400-700nm, and lower variation in the energy band gap with film thickness than the Si3N4 films prepared from n-type silicon target.

This paper aims to introduce certain new kinds of ideals on pseudo-BG-Algebra (P-BG-A), such as pseudo-closed ideal (P-CI), pseudo-completely closed ideal (P-CCI), and pseudo-n-ideal (P-n-I). Firstly, a (P-n-I) is defined and its pertinent properties are explored. Some important properties have been proven, for example, any pseudo-ideal is a (P-n-I), but the opposite is not generally true, an example was given of the opposite direction. Also, every pseudo-subalgebra of a (P-BG-A) is a pseudo ideal and it is a (P-n-I). Secondly, (P-CI) and a (P-CCI) ideal are defined. After that, we prove that every pseudo-subalgebra of a (P-BG-A) is a (P-CI) and the converse is true. The relationship between (P-BG-A) and pseudo-BH-algebra is demonstrated un

In this paper, simulation studies and applications of the New Weibull-Inverse Lomax (NWIL) distribution were presented. In the simulation studies, different sample sizes ranging from 30, 50, 100, 200, 300, to 500 were considered. Also, 1,000 replications were considered for the experiment. NWIL is a fat tail distribution. Higher moments are not easily derived except with some approximations. However, the estimates have higher precisions with low variances. Finally, the usefulness of the NWIL distribution was illustrated by fitting two data  sets

Silver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2