Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1) compared to experimental 0.035 eV (285.2 cm-1). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.
The effects of incorporating lithium carbonate (Li2CO3) into a polyvinyl alcohol/polyvinyl pyrrolidone/polyethylene glycol (PVA/PVP/PEG) blend polymer electrolyte were investigated. Electrolytes were prepared via solution casting method, with Li2CO3 added at 10, 20, and 30 wt.% to the PVA/PVP/PEG blend (50/30/20 ratio). Fourier transform infrared spectroscopy analysis revealed interactions between the added salt and the polymer blend. The addition of both PEG and Li2CO3 resulted in increased ionic conductivity, reaching a maximum of 4.51 x 10- 5 S/cm at 30 degrees C with 20 wt.% Li2CO3. Ionic conductivity also exhibited a positive temperature dependence. Optical analysis showed a decrease in the optical energy gap with the addition of PEG a
... Show MoreIn this research we prepared CdS thin films by Spray pyrolysis method on a glass substrates and we study its structural , optical , electrical properties .The result of (X-Ray ) diffraction showed that all thin films have a polycrystalline structure , The relation of the transmission as a function of wavelength for the CdS films had been studied , The investigated of direct energy gap of the CdS its value is (2.83 eV). In Hall effect measurement of the CdS we find the charge carriers is p – type and Hall coefficient 1157.33(cm3/c) ,Hall mobility 6.77(cm2/v.s)
This work concerned with effect of zinc oxide concentrating on the structural and optical properties of (MgO)1-x(ZnO)x thin films. (MgO)1-x(ZnO)x compounds were produced by mixing the two oxides powders accordance to the atomic ratios and compressed as pellets, these pellets were sintered in an oven at temperature1273K for five hours. Thin films from (MgO)1-x(ZnO)x compounds were obtained using pulsed laser deposition technique using Nd:YAG laser . The results of x-ray diffraction as well as UV-Visible- spectrophotometer measurements transmittance of (MgO)
(NiO) 1-x (ZnO) x compounds were prepared with different composition ratios. The compounds were obtained by mixing Nickle oxide and zinc oxide in the appropriate ratio and sintered at 1000°C for six hours. Pulsed laser deposition (PLD) method which is simple and inexpensive method was used to deposit (NiO) 1-x (ZnO) x thin films on glass substrate at ambient temperature. Structural, optical and properties were investigated. The structures investigation obtained from x-ray diffraction showed that the prepared of compound as well as thin films have polycrystalline structure where the diffraction peaks w
In this study, investigations of structural properties of n-type porous silicon prepared by laser assisted-electrochemical etching were demonstrated. The Photo- electrochemical Etching technique, (PEC) was used to produce porous silicon for n-type with orientation of (111). X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon surfaces. Atomic force microscopy (AFM) analysis was used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased. The chemical bonding and structure were investigated by using fourier transformation infrared spec
... Show MoreIn the present study NiPcTs, CdS thin films, and Blends of NiPcTs:CdS were prepared with 1:2 content mixing ratio of NiPcTs to CdS solutions. Cadmium chloride and thiourea were used as the essential materials for deposition CdS thin films while using organic powder of NiPcTs to deposit NiPcTs nanostructure films. The spin-coating technique was employed to fabricate the NiPcTs , CdS films and NiPcTs-CdS blend. Structural properties of films have been investigated via X-Ray diffraction(XRD),and show that thin films of NiPcTs, and CdS have monoclinic and polycrystalline hexagonal structure respectively while the blend has two polycrystalline structure with cubic and hexagonal phases. Atomic force microscope (AFM) confirmed that the surf
... Show MoreThin films of (CuO)x(ZnO)1-x composite were prepared by pulsed laser deposition technique and x ratio of 0≤ x ≤ 0.8 on clean corning glass substrate at room temperatures (RT) and annealed at 373 and 473K. The X-ray diffraction (XRD) analysis indicated that all prepared films have polycrystalline nature and the phase change from ZnO hexagonal wurtzite to CuO monoclinic structure with increasing x ratio. The deposited films were optically characterized by UV-VIS spectroscopy. The optical measurements showed that (CuO)x(ZnO)1-x films have direct energy gap. The energy band gaps of prepared thin films
This research is devoted to the effect of investigation of the ZnO content on the structural and electrical properties of (NiO)1-x (ZnO)x films prepared by pulsed laser precipitation on the glass substrate at room temperature. Thin-film (NiO)1-x (ZnO)x sediments were deposited with different composition ratios where x = 0, 0.2, 0.4, 0.6 and 1.0 with a thickness of n150nm. The diffraction pattern for X-ray analysis reveals that the structure of the prepared thin films is identical with the cubic phase and hexadecimal stage of x = 0 and 0.1, respectively while the structure is mixed with the remaining x
. The concepts of structural flexibility became one of the important goals in the design phases to reach high performance in architecture. The pioneering projects and ideas that linked architecture with technologies and scientific innovations appeared, with the aim of reaching projects that mix the concepts of flexibility with the development of machine thought and modern technology to meet the functional, environmental, and aesthetic requirements for human wellbeing. The aim of this paper is to identify the mechanisms used in order to reach flexible structural systems capable of accommodating technological changes and developments. The research hypothesizes that the structural design according to the concepts of flexibility achieves high s
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