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Temperature Effect on Power Drop of Different Photovoltaic Modules
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Solar module operating temperature is the second major factor affects the performance of solar photovoltaic panels after the amount of solar radiation. This paper presents a performance comparison of mono-crystalline Silicon (mc-Si), poly-crystalline Silicon (pc-Si), amorphous Silicon (a-Si) and Cupper Indium Gallium di-selenide (CIGS) photovoltaic technologies under Climate Conditions of Baghdad city. Temperature influence on the solar modules electric output parameters was investigated experimentally and their temperature coefficients was calculated. These temperature coefficients are important for all systems design and sizing. The experimental results revealed that the pc-Si module showed a decrease in open circuit voltage by -0.0912V/ºC while mc-Si and a-Si had nearly -0.07V/ºC and the CIGS has -0.0123V/ºC.  The results showed a slightly increase in short circuit current with temperature increasing about 0.3mA/ºC ,4.4mA/ºC and 0.9mA/ºC for mc-Si , pc-Si and both a-Si and CIGS. The mc-Si had the largest drop in output power about -0.1353W/ºC while -0.0915, -0.0114 and -0.0276 W/ºC for pc-Si, a-Si and CIGS respectively. The amorphous silicon is the more suitable module for high operation temperature but it has the lowest conversion efficiency between the tested modules.

 

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Publication Date
Sun Dec 04 2011
Journal Name
Baghdad Science Journal
Approximate Regular Modules
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There are two (non-equivalent) generalizations of Von Neuman regular rings to modules; one in the sense of Zelmanowize which is elementwise generalization, and the other in the sense of Fieldhowse. In this work, we introduced and studied the approximately regular modules, as well as many properties and characterizations are considered, also we study the relation between them by using approximately pointwise-projective modules.

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Publication Date
Tue Jan 01 2013
Journal Name
International Journal Of Algebra
Fully extending modules
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Throughout this paper we introduce the concept of quasi closed submodules which is weaker than the concept of closed submodules. By using this concept we define the class of fully extending modules, where an R-module M is called fully extending if every quasi closed submodule of M is a direct summand.This class of modules is stronger than the class of extending modules. Many results about this concept are given, also many relationships with other related concepts are introduced.

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Publication Date
Sun May 01 2022
Journal Name
Journal Of Physics: Conference Series
D_j -Supplemented Modules
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Scopus
Publication Date
Fri Jan 01 2010
Journal Name
Iraqi Journal Of Science
PRIME HOLLOW MODULES
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A non-zero module M is called hollow, if every proper submodule of M is small. In this work we introduce a generalization of this type of modules; we call it prime hollow modules. Some main properties of this kind of modules are investigated and the relation between these modules with hollow modules and some other modules are studied, such as semihollow, amply supplemented and lifting modules.

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Publication Date
Mon Mar 01 2021
Journal Name
Journal Of Physics: Conference Series
⊕-Rad -supplemented modules
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Publication Date
Tue Jan 01 2002
Journal Name
Iraqi Journal Of Science
Special selfgenerator Modules
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Let R be a commutative ring with identity, and let M be a unitary left R-module. M is called special selfgenerator or weak multiplication module if for each cyclic submodule Ra of M (equivalently, for each submodule N of M) there exists a family {fi} of endomorphism of M such that Ra = ∑_i▒f_i (M) (equivalently N = ∑_i▒f_i (M)). In this paper we introduce a class of modules properly contained in selfgenerator modules called special selfgenerator modules, and we study some of properties of these modules.

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Publication Date
Fri May 01 2020
Journal Name
Journal Of Physics: Conference Series
⊕-J-supplemented modules
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Scopus (1)
Scopus
Publication Date
Sun Apr 01 2012
Journal Name
Arpn
Effect of friction stir welding parameters (rotation and transverse) speed on the transient temperature distribution in friction stir welding of AA 7020-t53
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Three-dimensional nonlinear thermal numerical simulations are conducted for the friction stir welding (FSW) of AA 7020-T53. Three welding cases with tool (rotational and travel) speeds of 900rpm-40mm/min, 1400rpm-16mm/min and 1400rpm-40mm/in are analyzed. The objective is to study the variation of transient temperature in a friction stir welded plate of 5mm workpiece thickness. Based on the experimental records of transient temperature at several specific locations during the friction stir welding process for the AA 7020-T53, thermal numerical simulation is developed. The numerical results show that the temperature field in the FSW process is symmetrically distributed with respect to the welding line, increasing travel speed decreasing tran

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Scopus
Publication Date
Sun Mar 01 2009
Journal Name
Baghdad Science Journal
Studies on solution – growth thin films of CdS : Zn for photovoltaic application
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Structural, optical, and electrical properties of thin films of CdS : Zn prepared by the solution – growth technique are reported as a function of zinc concentration. CdS are window layers influencing the photovoltaic response of CIS solar cells. The zinc doping concentration was varied from 0.05 to 0.5 wt %, zinc doping apparently increase the band gap and lowers the resistivity. All beneficial optical properties of chemically deposited CdS thin films for application as window material in heterojunction optoelectronic devices are retained. Heat treatment in air at 400 °C for 1h modify crystalline structure, optical, and electrical properties of solution growth deposited CdS : Zn films.

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Publication Date
Sun Jan 12 2014
Journal Name
International Journal Of Current Engineering And Technology
The Effect of Sb Dopant and Annealing Temperature on the Structural and Optical Properties of GeSe Thin Films
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The pure and Sb doped GeSe thin films have been prepared by thermal flash evaporation technique. Both the structural and optical measurement were carried out for as deposited and annealed films at different annealing temperatures.XRD spectra revealed that the all films have one significant broad amorphous peak except for pure GeSe thin film which annealed at 573 K, it has sharp peak belong to orthorhombic structure nearly at 2θ=33o. The results of the optical studies showed that the optical transition is direct and indirect allowed. The energy gap in general increased with increasing annealing temperature and decreased with increase the ratio of Sb dopant. The optical parameters such as refractive index, extinction coefficient and real and

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