Background: Dental implants provide a unique treatment modality for the replacement of a lost dentition .This is accomplished by the insertion of relatively an inert material (a biomaterial) into the soft and hard tissue of the jaws, there by providing support and retention for dental prostheses. Low level laser therapy (LLLT) is an effective tool used to prompt bone repair and remodeling, this has referred to the biostimulation effect of LLLT. The Aim of this study was to evaluate the effects of inflammatory cells on osseointegration of CpTi implant irradiated by low level laser. Materials and Methods: thirty two adult New Zealand white rabbits, received titanium implants were inserted in the tibia. The right side is considered as experimental groups and the left side considered as control groups. Low power diode laser (GaAlAs ) with wave length (904nm) and (5mW)power applicated with the right implants . The sample divided into four groups, eight rabbits were sacrificed at four interval 4days, 1 weeks, 2weeks, and 6weeks respectively. Histological and inflammatory analyses were done for each interval. Results: Histological examination showed acceleration of bone formation and more rapid healing process in the screw implant with laser irradiation than in the control implant .inflammatory analysis showed dramatic decrease with the presence of laser irradiation especially with advancing time. Conclusion: This study illustrated that the inflammatory cells were reduced in osseointegration of dental implant treated with LLLT. Key words: Dental Implants, low level laser therapy, inflammatory cell.
In the present work, different thicknesses of CdS film were prepared by chemical bath deposition. Z-Scan technique was used to study the nonlinear refractive index and nonlinear absorption coefficients. Linear optical testing were done such as transmission test, and thickness of films were done by the interference fringes (Michelson interferometer). Z-scan experiment was performed at 650nm using CW diode laser and at 532nm wavelength. The results show the effect of self-focusing and defocusing that corresponds with nonlinear refraction n2. The effect of two-photon absorption was also studied, which correspond to the nonlinear absorption coefficient B.
The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has o
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Aim: The reduction in the amount of marginal bone is the most important demand for the long term success of dental implants. This prospective clinical study was aimed to investigate the marginal bone loss of early loaded SLActive implants with different dimensions and surgical approaches. Materials and methods Fifteen patients aged from 18 to 60 years were divided into 2 groups (flapped and flapless approach) that underwent delayed implant placement protocol with SLActive implants. The marginal bone level was estimated by cone-beam computed tomography during three different periods: preoperatively, 8 weeks after surgery and 24 weeks after loading of the prosthesis. Results: The mean value of marginal bone level was not significantly chan
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The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.
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In this work, pure and Ag-doped nickel oxide (NiO) thin films were deposited on glass substrates with different dopant concentrations (0.1, 0.2, 0.3 and 0.4 wt.%) by pulsed-laser deposition (PLD) technique at room temperature. These films were annealed at temperature of 450 °C. The structural and optical properties of the prepared thin films were studied. It was found that annealing process has lead to increase the transmittance of the deposited films. Also, the transmittance was found to increase with doping concentration of silver in the deposited NiO films. The optical energy gap was decreased from 3.5 to 3.2 eV as the doping concentration was increased to 0.4 %.
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TiO2 thin films have been deposited at different concentration of
CdO of (x= 0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substrates
by pulsed laser deposition technique (PLD) using Nd-YAG laser
with λ=1064nm, energy=800mJ and number of shots=500. The
thickness of the film was 200nm. The films were annealed to
different annealing (423 and 523) k. The effect of annealing
temperatures and concentration of CdO on the structural and
photoluminescence (PL) properties were investigated. X-ray
diffraction (XRD) results reveals that the deposited TiO2(1-x)CdOx
thin films were polycrystalline with tetragonal structure and many
peaks were appeared at (110), (101), (111) and (211) planes with
preferred orientatio
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