In this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is) for these junctions. These junctions are used in photo sensors applications, where the photo sensors have been examined at blue light region. Sensitivity, rise and fall times have been calculated for this wavelength, the maximum value for sensitivity is (3797.6 %) at etching current density 10 mA/cm2 under blue light illumination at zero bias voltage.
The wave functions of converted harmonic-oscillator in local scaling transformations are employed to evaluate charge distributions and elastic charge electron scattering form structures for 6,7Li, 9Be, 14,15N and 16O nuclei. The nuclear shell-model was fulfilled using Warburton-Brown psd-shell (WBP) interaction with truncation in model space. Very good agreements with the experimental data were obtained for the aforementioned quantities.
The adsorption process of reactive blue 49 (RB49) dye and reactive red 195 (RR195) dye from an aqueous solutions was explored using a novel adsorbent produced from the sunflower husks encapsulated with copper oxide nanoparticle (CSFH). Primarily, the features of a CSFH, such as surface morphology, functional groups, and structure, were characterized. It was determined that coating the sunflower husks with copper oxide nanoparticles greatly improved the surface and structural properties related to the adsorption capacity. The adsorption process was successful, with a removal efficiency of 97% for RB49 and 98% for RR195 under optimal operating conditions, contact time of 180 min, pH of 7, agitation speed of 150 rpm, initial dye concentration
... Show MoreThe present work aims to study the removal of dyes from wastewater by reverse osmosis process. Two dyes were used direct blue 6, and direct yellow. Experiments were performed with feed concentration (75 – 450 ppm), operation temperature (30 – 50 oC) and time (0.2 – 2.0 hr). The membrane used is thin film composite membrane (TFC). It was found that modal permeate concentration decreases with increasing feed concentration and time operating, while permeate concentration increases with increasing feed temperature. Also it was found that product rate increase with increasing temperature, but it decrease with increasing feed concentration and time. The concentration of reject solution showed an increase with increasing feed concentratio
... Show MoreWe describe the use of on-chip buckled-dome Fabry–Perot microcavities as pressure sensing elements. These cavities, fabricated by a controlled thin-film buckling process, are inherently sealed and support stable optical modes (finesse
Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that correlate well with the chemical characteristics of chemical compounds. In the modern age, topological indices are extremely important in the study of graph theory. Topological indices are critical tools for understanding the core topology of chemical structures while examining chemical substances. In this article, compute the first and second k-Banhatti index, modified first and second k-Banhatti index, first and second k-hyper Banhatti index, fir
... Show MoreThe electrical properties of CdO/porous Si/c-Si heterojunction prepared by deposition of CdO layer on porous silicon synthesized by electrochemical etching were studied. The structural, optical, and electrical properties of CdO (50:50) thin film prepared by rapid thermal oxidation were examined. X-ray diffraction (XRD) results confirmed formation of nanostructured silicon layer the full width half maximum (FWHM) was increased after etching. The dark J-V characteristics of the heterojunction showed strong dependence on etching current density and etching time. The ideality factor and saturation current of the heterojunction were calculated from J-V under forward bias. C-V measurements confirmed that the prepared heterojunctions are abrupt
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