In this work a Nd:YVO4 thin disc laser setup is designed and fabricated. The disk laser system
is designed to be compact. The laser crystal was pumped by a 808 nm diode laser. The effect of input
current and pulse frequency on the output energy at pulse operation mode, and the effect of the input
current on the output power at CW mode operation are tested. At the pulsed mode, the output energy
increased linearly with the input current and decreased with pulse frequency. The threshold current
increased with increasing pulse frequency increasing. The maximum output energy from the thin disc
laser was 0.98 μJ at 1.3 kHz frequency, with 0.49A. A minimum threshold current for CW mode of
operation. The maximum outpu

In this work the design and construction of a flash photolysis pulsed HCl laser was presented. The parameters of the pumping source and discharge current density was obtained, which sufficient to shift the flash lamp spectrum towards uv portion of spectrum. The maximum pulse laser energy parameters was measured. Total pressure and ratio of active gases to optimized the output pulse energy were measured , where at 125 mbar of total pressure and 1:7:14 Cl2:H2: He ratio, the laser energy was measured to be 200 mJ at pumping four flash lamps energy in the order of 6400J .The resonator consists of copper a near hemispherical mirror with the radius of curvature 3m coated by gold and reflectivity 98%,the output coupler sapphire mirror of

Cervical ectropion is considered to be a physiologic condition caused by columnar epithelium migration from the cervical canal into the vaginal portion of the cervix and usually there is no treatement for clinically asymptomatic cervical ectropion . Treatment can be achieved by thermal cauterization (Electrocautery), Cryosurgery or laser vaporization. Aim of the study: To study the effectiveness of CO2 laser (10600nm) in treatment of symptomatic cervical ectropion . Setting: The study was carried out at Laser Medicine Research Clinic at the Institute of Laser for Postgraduate Studies, University of Baghdad between the first of August 2013 to the end of October 2013. Patients and Methods: Ten female Patients with age range between 25-48 y

The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10–5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after

The research involved attempt to inhibit the corrosion of Al-Si-Cu alloy in 2.5x10-3 mol.dm-3 NaOH solution (pH=11.4) by addition of six different inhibitors with three concentrations (1x10-3, 1x10-2, and 0.1 mol.dm-3). These inhibitors include three organic materials (sodium acetate, sodium benzoate, and sodium oxalate) and three inorganic materials (sodium chromate, disodium phosphate, and sodium sulphate). The data that concerning polarization behaviour are calculates which include the corrosion potential (Ecorr) and current density (icorr), cathodic and anodic Tafel slopes (bc & ba), and polarization resistance (Rp). Protection efficiency (P%) and activation energy (Ea) values were calculated for inhibition by the six inhibitors. The

Visible-light photodetectors constructed Fe2O3 were manufactured effectively concluded chemical precipitation technique, films deposited on glass substrate and Si wafer below diverse dopant (0,2,4,6)% of Cl, enhancement in intensity with X-ray diffraction analysis was showed through favored orientation along the (110) plane, the optical measurement presented direct allowed with reduced band gap energies thru variation doping ratio , current–voltage characteristics Fe2O3 /p-Si heterojunction revealed respectable correcting performance in dark, amplified by way of intensity of incident light, moreover good photodetector properties with enhancement in responsivity occurred at wavelength between 400 nm and 470 nm.