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Estimation of electron temperature for SiO2 plasma induced by laser
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In this work; Silicon dioxide (SiO2) were fabricated by pulsed
laser ablation (PLA). The electron temperature was calculated by
reading the data of I-V curve of Langmuir probe which was
employed as a diagnostic technique for measuring plasma properties.
Pulsed Nd:YA Glaser was used for measuring the electron
temperature of SiO2 plasma plume under vacuum environment with
varying both pressure and axial distance from the target surface. The
electron temperature has been measured experimentally and the
effects of each of pressure and Langmuir probe distance from the
target were studied. An inverse relationship between electron
temperature and both pressure and axial distance was observed.

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Publication Date
Fri Jan 01 2021
Journal Name
Materials Today:proceeding
Modification of CR39 surfaces by 193 nm ArF laser for biomaterial sensing
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Publication Date
Tue Jan 01 2013
Journal Name
International Journal Of Science And Technology (ijst)
Study of Optical and Structures for TiO2 prepared by Pulse Laser Deposition
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Publication Date
Sat Aug 31 2019
Journal Name
Iraqi Journal Of Physics
Spectroscopic Diagnostic of Cadmium Sulfide Plasma Produced By LIBS
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Abstract

       The current study was carried out to reveal the plasma parameters such as ,the electron temperature ( ), electron density (ne) , plasma frequency (fp), Debye length ( ) , Debye number (   for  CdS to employ the LIBS for the purpose of analyzing and determining spectral emission lines using . The results of electron temperature for CdS range (0.746-0.856) eV , the electron density(3.909-4.691)×1018 cm-3. Finally ,we discuss plasma parameters of CdS  through  nano second  laser generated plasma .

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Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
Nanocrystalline -Silicon Carbide Films Prepared by TEACO2 Laser
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Thin films of microcrystalline and nanocrystalline -silicon carbide and silicon, where deposited on glass substrate with substrate temperature ranging from 350-400C, with deposition rate 0.5nm per pulse, by laser induced chemical vapor deposition. The deposition induced by TEACO2 laser. The reactant gases (SiH4 and C2H4) photo decompose throughout collision associated multiple photon dissociate. Such inhomogeneous film structure containing crystalline silicon, silicon carbide and amorphous silicon carbide matrix, give rise to a new type of material nanocrystalline silicon carbide in which the optical transmittance is governed by amorphous SiC phase while nanocrystalline grain are responsible for the conduction processes. This new m

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Publication Date
Sun Sep 06 2009
Journal Name
Baghdad Science Journal
Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
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The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed

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Publication Date
Mon Oct 01 2012
Journal Name
Iraqi Journal Of Physics
Double probe for measuring the plasma parameters
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In this work the diode planer magnetron sputtering device was
designed and fabricated. This device consists of two aluminum discs
(8cm) diameter and (5mm) thick. The distance between the two
electrodes is 2cm, 3cm, 4cm and 5cm.
Design and construction a double probe of tungsten wire with
(0.1mm) diameter and (1.2mm) length has been done to investigate
electron temperature, electron and ion density under different
distances between cathode and anode. The probes were situated in
the center of plasma between anode and cathode.
The results of this work show that, when the distance between
cathode and anode increased, the electron temperature decreased.
Also, the electron density increases with the increasing

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Publication Date
Tue May 01 2018
Journal Name
Journal Of Physics: Conference Series
Study electron transport coefficients for Ar, O<sub>2</sub> and their mixtures by using EEDF program
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Publication Date
Sat Jan 01 2022
Journal Name
Optik
Plasma parameters of Au nano-particles ablated on porous silicon produced via Nd-YAG laser at 355 nm for sensing NH3 gas
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a laser ablation Q-switched Nd: YAG laser with a wave-length of 355 nm at a variety of laser pulse energies (E) and deposited on porous silicon (PS). Optical emission spectrometer was used to diagnosed medium air to study gold plasma characteristics and prepared Au nanoparticles. The laser pulse energy influence has been studied on the plasma characteristics in air. The data showed the emergence of the ionic (Au II) spectral emission lines in the gold plasma emission spectrum. XRD has been utilized to examine structural characteristics. Moreover, AFM results 37.2 nm as the mean value of the diameter that is coordinated in a shape similar to the rod that appears for Au NPs, in addition to that, TEM has been an indication of the fact that syn

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Publication Date
Thu Nov 04 2021
Journal Name
Optik - International Journal For Light And Electron Optics
Plasma parameters of Au nano-particles ablated on porous silicon produced via Nd-YAG laser at 355 nm for sensing NH3 gas
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The current study aimed the syntheses and characterizations of Gold nanoparticles (Au NPs) using a laser ablation Q-switched Nd: YAG laser with a wave-length of 355 nm at a variety of laser pulse energies (E) and deposited on porous silicon (PS). Optical emission spectrometer was used to diagnosed medium air to study gold plasma characteristics and prepared Au nanoparticles. The laser pulse energy influence has been studied on the plasma characteristics in air. The data showed the emergence of the ionic (Au II) spectral emission lines in the gold plasma emission spectrum. XRD has been utilized to examine structural characteristics. Moreover, AFM results 37.2 nm as the mean value of the diameter that is coordinated in a shape similar to the

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Publication Date
Thu Jul 27 2023
Journal Name
Journal Of Optics
Spectroscopic analysis of zinc plasma produced by alternating and direct current jet
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In this study, a system of nonthermal plasma that was operated under atmospheric pressure and was powered by argon gas was employed. The particular plasma properties are affected by changes in the Ar gas flow ranges from 0.5 to 2.5 l/min, product by stream of the plasma jet that is utilized. By using the aforementioned method generated from AC and DC. After placing Ar gas as the cathode, which represents the negative pole, flows toward the anode, which is represented by a tiny metal plate of Zn measuring 6 × 1 cm2 in size, with a submerged part of 4 cm2 long, with both types of current employed having a high voltage of 13.5 kV and the frequency of AC was 30 kHz, we measured these variable parameters. It has been shown that when argon f

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