Preferred Language
Articles
/
ijp-13
Influence of substrates on the properties of cerium -doped CdO nanocrystalline thin films
...Show More Authors

Transparent thin films of CdO:Ce has been deposited on to glass and silicon substrates by spray pyrolysis technique for various concentrations of cerium (2, 4, and 6 Vol.%). CdO:Ce films were characterized using different techniques such as X-ray diffraction (XRD), atomic force microscopy(AFM) and optical properties. XRD analysis show that CdO films exhibit cubic crystal structure with (1 1 1) preferred orientation and the intensity of the peak increases with increasing's of Ce contain when deposited films on glass substrate, while for silicon substrate, the intensity of peaks decreases, the results reveal that the grain size of the prepared thin film is approximately (73.75-109.88) nm various with increased of cerium content. With a surface roughness of (0.871–16.2) nm as well as root mean square of (1.06-19.7) nm for glass substrate, while for silicon (84.79-107.48) nm, for a pure CdO and doped with Ce (2, 4, and 6 Vol.%). The 300-nm-thin CdO films showed that the optical energy band gap equal 2.6 eV, and increases with increasing doping until reaches a maximum value of 3.25 eV when doping levels 6 Vol.%.

Crossref
View Publication Preview PDF
Quick Preview PDF
Publication Date
Tue Feb 01 2022
Journal Name
Chalcogenide Letters
Copper telluride thin films for gas sensing applications
...Show More Authors

Copper Telluride Thin films of thickness 700nm and 900nm, prepared thin films using thermal evaporation on cleaned Si substrates kept at 300K under the vacuum about (4x10-5 ) mbar. The XRD analysis and (AFM) measurements use to study structure properties. The sensitivity (S) of the fabricated sensors to NO2 and H2 was measured at room temperature. The experimental relationship between S and thickness of the sensitive film was investigated, and higher S values were recorded for thicker sensors. Results showed that the best sensitivity was attributed to the Cu2Te film of 900 nm thickness at the H2 gas.

View Publication
Crossref (10)
Crossref
Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films
...Show More Authors

Alloys of InxSe1-x were prepared by quenching technique with
different In content (x=10, 20, 30, and 40). Thin films of these alloys
were prepared using thermal evaporation technique under vacuum of
10-5 mbar on glass, at room temperature R.T with different
thicknesses (t=300, 500 and 700 nm). The X–ray diffraction
measurement for bulk InxSe1-x showed that all alloys have
polycrystalline structures and the peaks for x=10 identical with Se,
while for x=20, 30 and 40 were identical with the Se and InSe
standard peaks. The diffraction patterns of InxSe1-x thin film show
that with low In content (x=10, and 20) samples have semi
crystalline structure, The increase of indium content to x=30
decreases degree o

... Show More
View Publication Preview PDF
Crossref (3)
Crossref
Publication Date
Mon Jan 01 2018
Journal Name
Journal Of Engineering And Applied Sciences
sEffect of Sb doping on CuAlSe2 thin films and their behavior on the preparation CuAlSe2/Si heterojunction solar cells
...Show More Authors

Publication Date
Wed Jul 17 2019
Journal Name
Aip Conference Proceedings
Annealing effect on characterization of nano crystalline SnSe thin films prepared by thermal evaporation
...Show More Authors

Tin Selenide (SnSe) Nano crystalline thin films of thickness 400±20 nm were deposited on glass substrate by thermal evaporation technique at R.T under a vacuum of ∼ 2 × 10− 5 mbar to study the effect of annealing temperatures (as-deposited, 100, 150 and 200) °C on its structural, surface morphology and optical properties. The films structure was characterized using X-ray diffraction (XRD) which showed that all the films have polycrystalline in nature and orthorhombic structure, with the preferred orientation along the (111) plane. These films was synthesized of very fine crystallites size of (14.8-24.5) nm, the effect of annealing temperatures on the cell parameters, crystallite size and dislocation density were observed.

... Show More
View Publication Preview PDF
Scopus (14)
Crossref (12)
Scopus Clarivate Crossref
Publication Date
Mon Mar 01 2021
Journal Name
Iraqi Journal Of Physics
Investigation of Structural, Mechanical, Thermal and Optical Properties of Cu Doped TiO2
...Show More Authors

In this work, Pure and Cu: doped titanium dioxide nano-powder was prepared through a solid-state method. the dopant concentration [Cu/TiO2 in atomic percentage (wt%)] is derived from 0 to 7 wt.%. structural properties of the samples performed with XRD revealed all nanopowders are of titanium dioxide having polycrystalline nature. Physical and Morphological studies were conducted using a scanning electronic microscope SEM test instrument to confirm the grain size and texture. The other properties of samples were examined using an optical microscope, Lee's Disc, Shore D hardness instrument, Fourier-transform infrared spectroscopy (FTIR), and Energy-dispersive X-ray spectroscopy (EDX). Results showed that the thermal conductivity

... Show More
View Publication Preview PDF
Crossref (4)
Crossref
Publication Date
Sun Jun 01 2008
Journal Name
Baghdad Science Journal
The role of annealing temperature on the optical energy gap and Urbach energy of Se:2%Sb thin films
...Show More Authors

The optical energy gap(Eopt) and the width of the tails of localized states in the band gap (?E) for Se:2%Sb thin films prepared by thermal co-evaporation method as a function of annealing temperature are studied in the photon energy range ( 1 to 5.4)eV.Se2%Sb film was found to be indirect transition with energy gap of (1.973,2.077, 2.096, 2.17) eV at annealing temperature (295,370,445,520)K respectively. The Eopt and ?E of Se:2%Sb films as a function of annealing temperature showed an increase in Eopt and a decrease in ?E with increasing the annealing temperature. This behavior may be related to structural defects and dangling bonds.

View Publication Preview PDF
Crossref
Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Enhanced hydrogen gas sensitivity employing sputtered deposited NiO thin films
...Show More Authors

View Publication Preview PDF
Crossref
Publication Date
Sun Jan 01 2012
Journal Name
Aip Conference Proceedings
The electrical conductivity and thermoelectric power dependence on the thicknesses for thermally deposited thin CdS films
...Show More Authors

View Publication
Scopus (7)
Crossref (5)
Scopus Clarivate Crossref
Publication Date
Sun Sep 30 2001
Journal Name
Iraqi Journal Of Chemical And Petroleum Engineering
Component of Pattern Materials and Its Influence on Physical Properties
...Show More Authors

View Publication Preview PDF
Publication Date
Wed Aug 01 2018
Journal Name
Materials Research Bulletin
Chemical bath deposition of single crystal SnS nanobelts on glass substrates
...Show More Authors

SnS nanobelt thin films were deposited on glass substrates in acidic solution by chemical bath deposition (CBD) method. The belt-like morphologies of as-deposited SnS thin films were characterized by scanning electron microscope (SEM) and transmission electron microscopy (TEM). X-ray diffraction (XRD) and Raman measurements were carried out to confirm the crystal structures and phase purities of SnS nanobelt thin films. The morphologies and phase purities of SnS thin films were influenced greatly by the tin and sulfur precursors. The bandgaps of SnS nanobelts were determined to be 1.39–1.41 eV by UV–vis absorption and photoluminescence (PL) spectra. Current-voltage ((I-V)) and current-time ((I-T)) characteristics were studied to demon

... Show More
View Publication
Scopus (28)
Crossref (26)
Scopus Clarivate Crossref