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The effect of current density on the structures and photoluminescence of n-type porous silicon
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Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon. The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR). The band gap of the samples obtained from photoluminescence (PL). These results showed that the band gap of porous silicon increase with increasing porosity.

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Publication Date
Wed Oct 28 2020
Journal Name
International Journal Of Agricultural And Statistical Sciences 16
Effect of nano-fertilizers and amino acids on the growth and yield of broccoli
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Publication Date
Thu Jul 27 2023
Journal Name
Journal Of Optics
Spectroscopic analysis of zinc plasma produced by alternating and direct current jet
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In this study, a system of nonthermal plasma that was operated under atmospheric pressure and was powered by argon gas was employed. The particular plasma properties are affected by changes in the Ar gas flow ranges from 0.5 to 2.5 l/min, product by stream of the plasma jet that is utilized. By using the aforementioned method generated from AC and DC. After placing Ar gas as the cathode, which represents the negative pole, flows toward the anode, which is represented by a tiny metal plate of Zn measuring 6 × 1 cm2 in size, with a submerged part of 4 cm2 long, with both types of current employed having a high voltage of 13.5 kV and the frequency of AC was 30 kHz, we measured these variable parameters. It has been shown that when argon f

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Publication Date
Tue Oct 08 2002
Journal Name
Iraqi Journal Of Laser
Spatial Response Uniformity of Silicon–Based CdS and PbS Heterojunction Laser Detectors
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This paper demonstrates the spatial response uniformity (SRU) of two types of heterojunctions (CdS, PbS /Si) laser detectors. The spatial response nonuniformity of these heterojunctions is not significant and it is negligible in comparison with p+- n silicon photodiode. Experimental results show that the uniformity of CdS /Si is better than that of PbS /Si heterojunction

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Publication Date
Wed Jan 01 2020
Journal Name
Advanced Composites Letters
Enhanced thermal and electrical properties of epoxy/carbon fiber–silicon carbide composites
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The silicon carbide/carbon fiber (SiC/CF) hybrid fillers were introduced to improve the electrical and thermal conductivities of the epoxy resin composites. Results of Fourier transform infrared spectroscopy revealed that the peaks at 3532 and 2850 cm−1 relate to carboxylic acid O–H stretching and aldehyde C–H stretching appearing deeper with an increased volume fraction of SiC. Scanning electron microscopic image shows a better interface bonding between the fiber and the matrix when the volume fraction of SiC particles are increased. As frequency increases from 102 Hz to 106 Hz, dielectric constants decrease slightly. Dissipation factor (tan δ) values keep low a

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Publication Date
Fri Jan 01 2021
Journal Name
Plant Archives
STUDY OF THE EFFECT OF SPEED, DEPTH OF THE CULTIVATION AND THE NUMBER OF TIMES THE SPRING – LOADED CULTIVATOR PASSES ON SOME TECHNICAL PARAMETERS OF THE CULTIVATOR AND ON WEED CONTROL
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Publication Date
Fri Jan 15 2021
Journal Name
Plant Archives
STUDY OF THE EFFECT OF SPEED, DEPTH OF THE CULTIVATION AND THE NUMBER OF TIMES THE SPRING – LOADED CULTIVATOR PASSES ON SOME TECHNICAL PARAMETERS OF THE CULTIVATOR AND ON WEED CONTRO
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Publication Date
Wed Sep 27 2023
Journal Name
Journal Of Optics
Studying the responsivity and detectivity of GO/PSi/n-Si photo detector via drop casting technique
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Publication Date
Wed Sep 27 2023
Journal Name
Journal Of Optics
Studying the responsivity and detectivity of GO/PSi/n-Si photo detector via drop casting technique
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Publication Date
Fri Jan 15 2021
Journal Name
Journal Of Mechanical Engineering Research And Developments
Comparison of the Effect Using Color Sensor and Pixy2 Camer on the Classification of Pepper Crop
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Image processing applications are currently spreading rapidly in industrial agriculture. The process of sorting agricultural fruits according to their color comes first among many studies conducted in industrial agriculture. Therefore, it is necessary to conduct a study by developing an agricultural crop separator with a low economic cost, however automatically works to increase the effectiveness and efficiency in sorting agricultural crops. In this study, colored pepper fruits were sorted using a Pixy2 camera on the basis of algorithm image analysis, and by using a TCS3200 color sensor on the basis of analyzing the outer surface of the pepper fruits, thus This separation process is done by specifying the pepper according to the color of it

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Publication Date
Sun Sep 07 2008
Journal Name
Baghdad Science Journal
Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films
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The electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.

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