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The Influence of RF power, pressure and substrate temperature on optical properties of RF Sputtered vanadium pentoxide thin films
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The V2O5 films were deposited on glass substrates which produce using "radio frequency (RF)"power supply and Argon gas technique. The optical properties were investigated by, UV spectroscopy at "radio frequency" (RF) power ranging from 75 - 150 Watt and gas pressure, (0.03, 0.05 and 0.007 Torr), and substrate temperature (359, 373,473 and 573) K. The UV-Visible analysis shows that the average transmittance of all films in the range 40-65 %. When the thickness has been increased the transhumance was decreased from (65-40) %. The values of energy band gap were lowered from (3.02-2.9 eV) with the increase of thickness the films in relation to an increase in power, The energy gap decreased (2.8 - 2.7) eV with an increase in the pressure and substrate temperature respectively.

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Publication Date
Sun Feb 10 2019
Journal Name
Iraqi Journal Of Physics
Thermoelectric power for thermally deposited cadmium telluride films
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Thermal evaporation method has used for depositing CdTe films
on corning glass slides under vacuum of about 10-5mbar. The
thicknesses of the prepared films are400 and 1000 nm. The prepared
films annealed at 573 K. The structural of CdTe powder and prepared
films investigated. The hopping and thermal energies of as deposited
and annealed CdTe films studied as a function of thickness. A
polycrystalline structure observed for CdTe powder and prepared
films. All prepared films are p-type semiconductor. The hopping
energy decreased as thickness increased, while thermal energy
increased.

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
SiCi_xNxthin films preparation by TEA-Co2 Laser induced Vapor-phase reaction and study of the nature of chemical bonds and some their electrical and optical properties
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A pulsed (TEA-0O2) laser was used to dissociate molecules of silane ethylene (C2I-14) and ammonia (NH3) gases, through collision assisted multiple photon dissociation (MPD) to deposit(SiC i_xNx) thin films, where the X-values are 0, 0.13 and 0.33, on glass substrate at T,----648 K. deposition rate of (0.416-0.833) nm/pulse and thickness of (500-1000)nm .Fourier transform infrared spectrometry (FT-IR) was used to study the nature of the chemical bonds that exist in the films. Results revealed that these films contain complex networks of the atomic (Si, C, and N), other a quantity of atomic hydrogen and chemical bonds such as (Si-N, C-N, C-14 and N-H).Absorbance and Transmittance spectra in the wavelength range (400-1100) nm were used to stud

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Publication Date
Tue Oct 25 2022
Journal Name
Aip Conference Proceedings
The structural properties of mawsoniteCu6Fe2 S8Sn[CFTS] thin films effected by violet laser irradiation deposited via semi-computerized spray pyrolysis technique
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Publication Date
Tue May 01 2018
Journal Name
Photomedicine And Laser Surgery
In Vitro Influence of Low-Power Diode Laser Irradiation Time on Human Red Blood Cells
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Objective: The present study investigates whether the exposure to low-power diode laser induces denaturation in red blood cell (RBC) membrane protein composition, and determines the irradiation time for when denaturation of membrane protein process begins. Background: A low-energy laser has been used extensively in medical applications. Several studies indicated significant positive effects of laser therapy on biological systems. In contrast, other studies reported that laser induced unwanted changes in cell structure and biological systems. The present work studied the effect of irradiation time of low-power diode laser on the structure of membrane proteins of human RBCs. Materials and methods: The RBC suspension was divided into five equa

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Publication Date
Thu May 01 2003
Journal Name
Renewable Energy
FT-IR and XPS analysis of a-Si1-xGex:H thin films
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Publication Date
Thu Apr 29 2021
Journal Name
Egyptian Journal Of Chemistry
Fabrication and Study of ZnO thin Films using Thermal Evaporation Technique
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Pure SnSe thin film and doped with S at different percentage (0,3,5,7)% were deposited from alloy by thermal evaporation technique on glass substrate at room temperature with 400±20nm thickness .The influences of S dopant ratio on characterization of SnSe thin film Nano crystalline was investigated by using Atomic force microscopy(AFM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), Hall Effect measurement, UV-Vis absorption spectroscopy to study morphological, structural, electrical and optical properties respectively .The XRD showed that all the films have polycrystalline in nature with orthorhombic structure, with preferred orientation along (111)plane .These films was manufactured of very fine crystalline size in the ra

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Publication Date
Mon Feb 18 2019
Journal Name
Iraqi Journal Of Physics
Indium doped ZnO Urbach energy and dispersion parameters of thin films
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The characterization of ZnO and ZnO:In thin films were confirmed by spray pyrolysis technique. The films were deposited onto glass substrate at a temperature of 450°C. Optical absorption measurements were also studied by UV-VIS technique in the wavelength range 300-900 nm which was used to calculate the optical constants. The changes in dispersion and Urbach parameters were investigated as a function of In content. The optical energy gap was decreased and the wide band tails were increased in width from 616 to 844 eV as the In content increased from 0wt.% to 3wt.%. The single–oscillator parameters were determined also the change in dispersion was investigated before and after doping.

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Publication Date
Wed Mar 10 2021
Journal Name
Baghdad Science Journal
Influence of Laser Irradiation Times on Properties of Porous Silicon
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Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
effect of doping with nitrogen on the optical constant of the sic films prepared by TEA-Co2 Laser
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In this research prepare membranes pure silicon carbide (SiC) as well as gas Alloy (ammonia) and using a laser was leaked membrane of glass flooring. To Drasesh optical properties of membranes prepared depending on the technique (Swanepoel) and Adhrt results obtained in general increased permeability pure silicon membranes

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Publication Date
Sun Jun 20 2021
Journal Name
Baghdad Science Journal
Studying the Changes in Solar Radiation and Their Influence on Temperature Trend in Iraq for a Whole Century
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Most studies indicated that the values ​​of atmospheric variables have changed from their general rates due to pollution or global warming etc. Hence, the research indicates the changes of direct solar radiation values ​​over a whole century i.e. from 1900 to 2000 depending on registered data for four cities, namely (Mosul - Baghdad - Rutba - Basra. Moreover, attemptsto correlate the direct solar radiation with the temperature values have been ​​recorded over that period. The results showed that there is a decreasing pattern of radiation quantities over time throughout the study period, where the value of direct radiation over the city of Baghdad 5550 w/m2 was recorded in the year 1900, but this ratio decreased cle

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