One of the most popular causes for implant infection is dental plaque bacteria. Previous studies have shown the bactericidal effect of CO2 laser irradiation on bacteria associated with soft tissue surrounding the implant materials. No published studies have examined the effect of irradiation by CO2 laser on Streptococcus oralis and Staphylococcus aureus.The aim of this study was to evaluate the bactericidal effect of CO2 laser on bacteria that are causing dental implant infections. This study was carried out on two isolates of bacterial species out of 25 samples, isolated from patients having soft tissue infections around the dental implant. These two pure isolates including Streptococcus oralis and Staphylococcus aureus were identified by microscopic examination, culture characteristics ,biochemical tests and API system. Bacterial suspension (10-6 CFU/ml) was irradiated with 10600 nm CO2 laser,CW mode emission using different power densities 500 -3000W/cm2 (500 W/cm2 increment)with different exposure times 10-60s (10 sec.increment for isolate of Streptococcus oralis) and 5-30s (5 sec. increment for isolate of Staphylococcus aureus).After the irradiation, 100μl of bacterial suspension was spread over agar plates and incubated at 37 ºC for 24-48 hrs. under aerobic and anaerobic conditions according to the nature growth of bacteria. Colony forming units (CFUs) were counted and compared with control group then the bactericidal effect of CO2 laser was assessed in relation to the colony forming units of control group.In this study the maximum bactericidal effect of CO2 laser on S.oralis was 100% at 2500W/cm2 with exposure times 50 and 60s, whereas the CO2 laser eliminated 100% of S.aureus at 3000W/cm2 at 25 and 30 s exposure time.The results indicate that irradiation by CO2 laser CW mode emission may be useful in reducing bacterial colony forming units at low (such as 1000 W/cm2) and high power density. Also the results of this study reveal that complete or nearly complete reduction in the bacterial counts may be achieved.
Survivin, a member of inhibitor of apoptosis family is increasingly used as a target for cancer therapy design because it has a key role in cell growth and inhibition of cell apoptosis. Also it can be used as a biomarker for targeting cancer because it is found in almost all cancer but not normal cells. Our strategy was to design (computationally) a molecule to be used as survivin inhibitor. This molecule was named lead10 and was used furthermore to find (virtually) existing drugs with a good survivin inhibition activity.
Watermarking operation can be defined as a process of embedding special wanted and reversible information in important secure files to protect the ownership or information of the wanted cover file based on the proposed singular value decomposition (SVD) watermark. The proposed method for digital watermark has very huge domain for constructing final number and this mean protecting watermark from conflict. The cover file is the important image need to be protected. A hidden watermark is a unique number extracted from the cover file by performing proposed related and successive operations, starting by dividing the original image into four various parts with unequal size. Each part of these four treated as a separate matrix and applying SVD
... Show MoreA field experiment was carried out to find out the effect of some herbicides(Pallas, Crash, U46) on the companion weed to three cultivars of the oat crop (Shefa, Hamel, and Pimula) and the yield and its components of these cultivars. The results showed the superiority of the two treatments of spraying weed herbicides (T1 and T2 ) by giving the best results, as they recorded the lowest number of weed plants after 30 days of spraying reached 1.44 and 1.67 plant/m2 . Besides, the lowest weed dry weight was 0.11 and 0.00 g/m2, and the highest inhibition percentage in dry weight was 98.44% and 100.0% of the two treatments, respectively. The treatment T2 was also superior by giving the highest control percentage of 93.28% compared to the compari
... Show MoreUsing photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and po
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