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Study of Optical Properties (Linear and Nonlinear) and Structures for CdS Thin Film Preparation in Spray Pyrolysis Technique
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Publication Date
Sat Oct 23 2021
Journal Name
Iraqi Journal Of Physics
Thin Film Dye Laser Based on BBQ Doped Poly (Methyl Meth-Acrylate)
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This paper reports on the laser emission properties of the BBQ dye in poly (methyl meth-acrylate)(PMMA). This host material combines the advantages of an organic environment for dye with the thermoptical mechanical properties of an organic dye. A BBQ dye solid solution in PMMA polymer. A nitrogen laser in untuned laser cavity has pumped thin films. We developed the concentration and the thickness to get high efficiency. The laser efficiency had been increased from 7% at thickness 1.5 m to 16.5% at thickness 3.5m, and from 1% to 10% when concentration increased from 1x10-5M to 1x10-3 M

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Publication Date
Mon Jul 01 2019
Journal Name
Journal Of Physics: Conference Series
Enhanced sensing properties of WO<sub>3</sub> and its binary systems for thin films gas sensors
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Abstract<p>Thin films of pure WO<sub>3</sub> and the binary systems of TiO<sub>2</sub>:WO<sub>3</sub>,MoO<sub>3</sub>:WO<sub>3</sub>,Cr<sub>2</sub>O<sub>3</sub>:WO<sub>3</sub>, and SnO<sub>2</sub>:WO<sub>3</sub> were prepared by pulsed laser deposition method. The single and binary compounds were sintered at 1273K for five hours. The deposition were done under vacuum of 2x10<sup>-2</sup> Torr at various substrates like glass and single crystal silicon wafer with negative conductance at ambient temperature thickness of ≍150 nm. The structures and morphology of pure WO<sub>3</sub></p> ... Show More
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Publication Date
Sun Mar 02 2008
Journal Name
Baghdad Science Journal
Study the Band Energy Structure and Absorption Coefficient for PbSe Thin Films
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The PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, the PbSe thin films prepared by thermal evaporation method and deposited at different substrate temperature (Ts) =R.T ,373 and 473K . The thin films that deposited at room temperature (R.T=303)K was annealed at temperature, Ta= R.T, 373 and 473K . By depended on D.C conductivity measurements calculated the density of state (DOS), The density of extended state N(Eext) increases with increasing the Ts and Ta, while the density of localized state N(Eloc) is decreased . We investigated the absorption coefficient (?) that measurement from reflection and transmission spectrum result, and the effect of Ts and Ta on it , also we calculated the tai

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Publication Date
Sun Jan 01 2023
Journal Name
Technologies And Materials For Renewable Energy, Environment And Sustainability: Tmrees22fr
Preparation and study the partial substitution of aluminum with copper on some physical properties of the compound TlSr2Ca2Cu3O8+δ
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Publication Date
Tue Dec 02 2014
Journal Name
International Journal Of Innovative Science, Engineering & Technology
Structural and Optical Properties of Synthesized Manganese doped ZnS Quantum Dots
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ZnS:MnP2+P nanoparticles were prepared by a simple microwave irradiation method under mild condition. The starting materials for the synthesis of ZnS:MnP 2+P quantum dots were zinc acetate as zinc source, thioacetamide as a sulfur source, manganese chloride as manganese source (R & M Chemical) and ethylene glycol as a solvent. All chemicals were analytical grade products and used without further purification. The quantum dots of ZnS:MnP 2+P with cubic structure were characterized by X-ray powder diffraction (XRD), the morphology of the film is seen by scanning electron microscopy (SEM) also by field effect scanning electron microscopy (FESEM). The composition of the samples is analysed by EDS. UV-Visible absorption spectroscopy analysis

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Publication Date
Thu Dec 15 2022
Journal Name
Journal Of Petroleum Research And Studies
Preparation and Characterization of High Surface Area Nanosilica from Iraqi Sand via Sol-Gel Technique
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The present study revealed a low-cost process for utilizing desert sand for preparing nanosilica by sol-gel technique. This work required sodium hydroxide, concentrated hydrochloric acid, distillate water as raw materials, and Iraqi sand. Nanosilica sample was characterized by X-Ray Diffraction (XRD), scanning electron microscopy analysis (SEM), atomic force microscope(AFM), surface area (BET) method, and fourier transform infrared (FTIR). The XRD result of produced sample is referred to as amorphous silica, and it has a broad peak at 2Θ= 22° – 22.5 º. SEM showed spherical, agglomerated silica particles with a diameter range of 26.57–28.93 nm. In addition, the average particle size was 76.35nm, with a dimension range of 40-11

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Publication Date
Fri Dec 01 2023
Journal Name
Iraqi Journal Of Physics
Study of the Optical Properties of 3MPA CdTe and 3MPA CdTe/CdSe Quantum Dots at PH 12 in Different Periods of Time
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This research aims to study the optical characteristics of semiconductor quantum dots (QDs) composed of CdTe and CdTe/CdSe core-shell structures. It utilizes the refluxed method to synthesize these nanoscale particles and aims to comprehend the growth process by monitoring their optical properties over varied periods of time and pH 12. Specifically, the optical evolution of these QDs is evaluated using photoluminescence (PL) and ultraviolet (UV) spectroscopy. For CdTe QDs, a consistent absorbance and peak intensity increase were observed across the spectrum over time. Conversely, CdTe/CdSe QDs displayed distinctive absorbance and peak intensity variations. These disparities might stem from irregularities in forming selenium (Se) layers a

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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Electrical Properties of ZnS Thin Films
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The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

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Publication Date
Sat Jul 02 2022
Journal Name
Journal Of Positive School Psychology
Morphological structures and their significance for the triple verb " The abstract and more in the Diwan of Al Yassin
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Verbs are an important material in the construction of the sentence, as they are among the requirements of every sophisticated language, and in this regard, Ibn Al-Gothic (d. 367 AH): “Know that verbs are the origins of the buildings of most speech, and thus scholars called them buildings.” Verbs are the source of expression of the speakers’ ideas to represent the element of activity and movement, and with their knowledge We infer the meanings of Arabic words, and Ibn Al-Sarraj (d. 316 AH) defined it: “The verb denotes a meaning and a time, and that time is either past, present, or future.” Its letters are original and does not drop from its construction a letter in the conjugation of its conjugations, and it is in Arabic two type

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Publication Date
Sat Oct 12 2019
Journal Name
Journal Of Engineering And Applied Sciences
Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell
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The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G5 mbar, with area of 1 cm2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostru

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