Abstract: This paper presents the results of the structural and optical analysis of CdS thin films prepared by Spray of Pyrolysis (SP) technique. The deposited CdS films were characterized using spectrophotometer and the effect of Sulfide on the structural properties of the films was investigated through the analysis of X-ray diffraction pattern (XRD). The growth of crystal became stronger and more oriented as seen in the X-ray diffraction pattern. The studying of X-ray diffraction showed that; all the films have the hexagonal structure with lattice constants a=b=4.1358 and c=6.7156A°, the crystallite size of the CdS thin films increases and strain (ε) as well as the dislocation density (δ) decreases. Also, the optical properties of the

Thin films of CdS:Cu were deposited onto glass substrate temperature 400 °c. The optieal properties have been studied for Cds doped with (1,3, 8) wt% of Cu before and after Gamma irradiation. It was found that the irradiation caused an ( Frenkel defects) where the atom is displaced from its original site leaving vacancy and forming on interstitial atom. It was found the irradiation caused an absorption edge shifting towards long wavelength as a result of the increasing of Cu concentration.

In this study, thin film of pure zinc oxide (ZnO) and ZnO doped with Ga2O3 films with different concentrations (0, 0.03, 0.05, 0.07 and 0.09)wt% were prepared by pulsed laser deposition. The powder mixture was then sintered in a furnace at 1273 K for 5 h. The resulting powders were thoroughly ground and then pressed using a special press to form discs with a diameter of 1 cm and a thickness of 0.5 cm. The deposition was carried out under a vacuum of 2.5×10−2 mbar on various substrates, including glass for AFM measurements and n-type crystalline silicon wafers for the gas sensor. AFM results revealed a progressive increase in both grain size and roughness with moderate doping and irregularity at high doping levels. Gas-sensing meas

This research examines the electrical, optical, and structural properties of zinc oxide (ZnO) and tin(IV) oxide (ZnO)1-x (SnO2)x composite thin films made by pulsed laser deposition, as well as the impact of composition concentration. The structural study of (ZnO)1-x (SnO2)x composites and thin films was conducted by X-ray analysis (XRD). Optical properties were investigated by UV–Vis infrared spectroscopy. The structural analysis revealed that all prepared thin-film composites were polycrystalline, exhibiting both hexagonal wurtzite and tetragonal phases for pure ZnO and SnO2, as well as a mixture of both phases for x=0.2 and 0.4. In contrast, the SnO2 phase was predominant for x=0.6 and 0.8. The increase in crystal size in the (

It is shown that pure and 3% boron doped a-Si0.1Ge0.9:H and a-Si0.1Ge0.9:N thin films
could be prepared by flash evaporation processes. The hydrogenation and nitrogenation
are very successful in situ after depositing the films. The FT-IR analysis gave all the
known absorbing bonds of hydrogen and nitrogen with Si and Ge.
Our data showed a considerable effect of annealing temperature on the structural and
optical properties of the prepared films. The optical energy gap (Eopt.) of a-Si0.1Ge0.9
samples showed to have significant increase with annealing temperature (Ta) also the
refractive index and the real part of dielectric constant increases with Ta, however the
extinction coefficient and imaginary part of dielect

The effect of 0.662MeV gamma radiation on the optical properties of the CdTe thin films was studied. 300nm thickness of CdTe samples were irradiated with doses (10, 20, 30,60krad) in room temperature. The absorption spectra for all the samples were recorded using UV- Visible spectrometer in order to calculate the energy gap, width of localized states and optical constants(refractive index, extinction coefficient, real and imaginary parts of dielectric constant). The optical energy gap was found to decrease from (1.53 to 1.48 eV), while the width of localized states increased from (1.34 to 1.49 eV) with the increasing of radiation dose. The behavior of energy gap with the irradiation dose makes the material a good candidate for dosimetry

Light soaking (LS) is widely employed to optimize CdTe-based solar cells, yet its microscopic origin remains controversial due to the entangled roles of illumination and thermal activation. Here, we establish a decoupled experimental strategy that independently disentangles light exposure and heating, revealing their fundamentally distinct and competing effects on defect dynamics in CdSeTe solar cells. Illumination alone induces a backward drift of acceptors under the light-enhanced built-in field, reducing apparent hole density and suppressing open-circuit voltage. In contrast, thermal activation promotes Cu redistribution toward the front junction and eliminates deep recombination centers, partially restoring device performance. Remarka