The silicon carbide/carbon fiber (SiC/CF) hybrid fillers were introduced to improve the electrical and thermal conductivities of the epoxy resin composites. Results of Fourier transform infrared spectroscopy revealed that the peaks at 3532 and 2850 cm−1 relate to carboxylic acid O–H stretching and aldehyde C–H stretching appearing deeper with an increased volume fraction of SiC. Scanning electron microscopic image shows a better interface bonding between the fiber and the matrix when the volume fraction of SiC particles are increased. As frequency increases from 102 Hz to 106 Hz, dielectric constants decrease slightly. Dissipation factor (tan δ) values keep low and almost constant from 102 Hz to 104 Hz, has a slight increase after 104 Hz, and obtain relaxation peaks approximately between 105 and 106 Hz. A sharp increase in dielectric constant and dissipation factors is observed in epoxy (Ep)/CF composites with 30 vol.% of SiC. The increase in electrical conductivity of composites may result from the increased chain ordering by annealing effect. The electrical conductivities of the Ep/CF composites are decreasing with the increasing volume fraction of SiC. It is attributed to the introduction of insulating SiC. The glass transition temperature ( T g) of the Ep/CF-30 vol.% SiC composite was 352 C, which was higher than other composites. The decomposition temperature at 5% weight loss, decomposition temperature at 10% weight loss, and maximum decomposition temperature of the Ep/CF-30 vol.% SiC composite were about 389.5°C, 410.7°C, and 591°C, respectively, and were higher than pure epoxy and other composites. A higher thermal conductivity of 1.86 W (m K)−1 could be achieved with 30 vol.% SiC/CF hybrid fillers, which is about nine times higher than that of native epoxy resin of 0.202 W (m.K)−1.
Pure Polyaniline salt, and protonation PANI by H2SO4 were synthesized by electro-chemical oxidative polymerization of aniline with acidity of H2SO4. The solution was prepared in reaction temperature equal 291 K and the acidity of aqueous solution was 1 molarities. The prepared polyaniline was characterized by FT-IR, the result indicate that the intensity is increase with increasing of applied voltage. The dc conductivity has been measured for bulk polyaniline pure and doped in the form of compressed pellet with evaporated Ohmic Al electrodes in temperature range (303-423) K. The Eav energy of the thermal rate process of the electrical conductivity was determined. The results indicate that the dc conductivity of doped samples are two or t
... Show MorePMMA films of different thickness (0.006, 0.0105, 0.0206, 0.0385 and 0.056cm) were synthesized by casting process. The temperature and frequency dependence of dielectric constant and AC electrical conductivity measurements at various frequencies (10kHz-10MHz) and temperatures (293-373K) were carried out. Few anomalies in dielectric studies were observed near 313 and 373 K respectively. These points were related to glass transitions temperature. The variation of activation energy and conduction behavior was studied .From the AC conduction studies, it is confirmed that the mechanism responsible for the conduction process is hopping of carriers. The variations of the dielectric constant and loss as function of frequency at different tempera
... Show MoreSimulated annealing (SA) has been an effective means that can address difficulties related to optimization problems. is now a common discipline for research with several productive applications such as production planning. Due to the fact that aggregate production planning (APP) is one of the most considerable problems in production planning, in this paper, we present multi-objective linear programming model for APP and optimized by . During the course of optimizing for the APP problem, it uncovered that the capability of was inadequate and its performance was substandard, particularly for a sizable controlled problem with many decision variables and plenty of constraints. Since this algorithm works sequentially then the current state wi
... Show MoreBackground: The most widely used material for fabrication of denture base is poly methyl methacrylate, despite its popularity, the main problems associated with it as a denture base material are poor strength particularly under fatigue failure inside the patient mouth, impact failure outside the patient mouth, which are the main causes for fracture of denture, several studies was done to increase mechanical properties of denture base. The present study was conducted to evaluate and compare the effect of addition single walled carbon nanotubes in different concentrations to polymethyl methacrylate on some mechanical properties (surface hardness, surface roughness, impact strength and transverse strength). Materials and methods: Forty eight
... Show MoreSolar photovoltaic (PV) system has emerged as one of the most promising technology to generate clean energy. In this work, the performance of monocrystalline silicon photovoltaic module is studied through observing the effect of necessary parameters: solar irradiation and ambient temperature. The single diode model with series resistors is selected to find the characterization of current-voltage (I-V) and power-voltage (P-V) curves by determining the values of five parameters ( ). This model shows a high accuracy in modeling the solar PV module under various weather conditions. The modeling is simulated via using MATLAB/Simulink software. The performance of the selected solar PV module is tested experimentally for differ
... Show MoreIn this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is
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