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Pulsed-laser deposition (PLD) technique was used to prepare thin films from
cerium oxide (CeO2) doped with erbium and indium oxides. In order to characterize
the morphology and sensing features, these films were deposited on glass and/or
single silicon substrates, respectively, with erbium and indium oxides. The
morphological investigation conducted using atomic force microscope has shown
an increase in the non-regularity of particle diameter with increasing doping ratios
of both oxides. The maximum particle diameter of 61.45nm was obtained for 9%
Eu2O3-doped CeO2. The surface roughness value of Eu2O3-doped ceria was higher
than those of In2O3-doped ceria. The gas sensing measurements were done at
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