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Thin film nanocomposite (TFN) membranes filled with a novel metal organic framework for reverse osmosis applications
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This paper reports the synthesis and use of a novel metal-organic framework (MOF), named Zr-BADS, within the thin-film nanocomposite (TFN) membranes for reverse osmosis (RO) applications. Two types of zirconium-based MOFs, Zr-BADS-1 and Zr-BADS-2, were synthesized via a solvothermal method using bicinchoninic acid disodium salt as a linker and either dimethylformamide or ethanol as solvent, respectively. TFN membranes were prepared by embedding these MOFs within the polyamide thin film supported by a polysulfone support sheet. The specific surface area of Zr-BADS-1 and Zr-BADS-2 was determined to be 396.1 and 278.6 m2/g, respectively, indicating significant surface area conducive to water permeation. Scanning electron microscopic analysis revealed a uniform distribution of Zr-BADS nanoparticles (NPs) with particle sizes ≤ 100 nm within the TFN membranes. TEM images confirmed the dense packing of NPs within the membranes, influencing their texture and enhancing performance. FTIR spectroscopy demonstrated the presence of characteristic peaks corresponding to MOFs within the TFN membranes, with changes observed at higher loading ratios. The observed contact angle decreased with increasing MOF loadings, indicating an enhancement in the hydrophilicity. Zr-BADS-1 NPs increased water flux at its optimal loading of 0.3%, and the flux raised to 5.4 L/m2 h bar. Salt rejection slightly decreased at low concentrations but improved at higher loading ratios, indicating the interplay between porosity and charge effects. Zr-BADS-1 outperformed other MOFs in salt rejection and water flux, suggesting it is a remarkable RO membrane filler. This study demonstrates the potential of Zr-BADS MOFs for future membrane applications in the environment.

Publication Date
Fri Oct 30 2020
Journal Name
Journal Of Economics And Administrative Sciences
Accounting measurement of intangible assets (websites) within the framework of international financial reporting standards An applied study between a sample of Iraqi commercial banks)
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The websites over time have become one of the important tools for communication between individuals among themselves and between individuals and economic units, and they have emerged as one of the important intangible assets to achieve income, as they have become a competitive tool and a marketing outlet for these units and a main means of communication that it uses to exercise its various major activities and achieve potential economic benefits. Therefore, there was a need to measure and display the value of these sites in the financial statements as intangible assets.  Accordingly, the purpose of the research was to determine the costs of the websites owned by the economic unit by way purchase and sites that were created i

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Publication Date
Sun Mar 07 2010
Journal Name
Baghdad Science Journal
Optical properties of CdO thin films
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Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.

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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Electrical Properties of ZnS Thin Films
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The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Optical Properties of GaN Thin Flim
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GaN thin films were deposited by thermal evaporation onto
glass substrates at substrate temperature of 403 K and a thickness of
385 nm . GaN films have amorphous structure as shown in X-ray
diffraction pattern . From absorbance data within the range ( 200-
900 ) nm direct optical energy gap was calculated . Also the others
optical parameters like transmittance T, reflectance R , refractive
index n , extinction coefficient k , real dielectric constant 1 Î , and
imaginary dielectric constant 2 Î were determined . GaN films
have good absorbance and minimum transmittance in the region of
the visible light .

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Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
Electrochemical deposition of CuInS2 thin films
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Chalcopyrite thin films were one-step potentiostatically deposited onto stainless steel plates from aqueous solution containing CuSO4, In2(SO4)3 and Na2S2O3.The ratio of (In3+:Cu2+) which involved in the solution and The effect of cathodic potentials on the structural had been studied. X-ray diffraction (XRD) patterns for deposited films showed that the suitable ratio of (In3+:Cu2+) =6:1, and suitable voltage is -0.90 V versus (Ag/AgCl) reference electrode

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Publication Date
Thu May 18 2023
Journal Name
Journal Of Engineering
Vibration Measurement and Analysis of knee-Ankle-Foot Orthosis (KAFO) Metal-Metal type
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This paper deals with calculate stresses in Knee-Ankle-Foot-Orthosis as a result of the effect vibration during gait cycle for patient wearing KAFO .Experimental part included measurement interface pressure between KAFO and leg due to action muscles and body weigh on Orthosis. also measurement acceleration result from motion of defected leg by accelerometer .Results of Experimental part used input in theoretical part so as to calculate stresses result from applying pressure and acceleration on KAFO by engineering analysis program ANSYS 14.Resultes show stresses values in upper KAFO greater than lower KAFO that is back to muscles more effective in thigh part lead to recoding pressure higher than pressure in shank part.

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Publication Date
Thu Jun 01 2017
Journal Name
Organic Electronics
Patterning organic transistors by dry-etching: The double layer lithography
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Publication Date
Sat Mar 31 2018
Journal Name
Journal Of Ovonic Research
Color-tunable of organic light emitting diode MEH-PPV: CNTs
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Organic light emitting diodes (OLEDs) were fabricated containing host molecule of conjugated polymer MEH-PPV poly (2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenlenevinylene) which was dissolved in chloroform solvent and doped with guest molecules MWCNTs that were dissolved in DMF solvent with different volume ratios 0.05 and 0.15, nanocomposite system which acts as active layer in OLEDs device. The Poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) "PEDOT:PSS" and Tris98-hydroxyquinoline) aluminum "Alq3" as hole transport layer HTL and electron transport layer ETL were used respectively, to enhanced the injection charge from the electrodes to the active layer. Spin coating method used for achieving facile and low cost OLED. The absorption s

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Publication Date
Mon Jan 01 2018
Journal Name
Iraqi Journal Of Agricultural Sciences 49 (4), 632-638‏
Influence of some organic fertilizers on date palm CV. Barhi
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Publication Date
Thu Nov 25 2021
Journal Name
Engineering And Technology Journal
Pentacene Based Organic Field Effect Transistor Using Different Gate Dielectric
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This paper presents the electrical behavior of the top contact/ bottom gate of an organic field-effect transistor (OFET) utilizing Pentacene as a semiconductor layer with two distinctive gate dielectric materials Polyvinylpyrrolidone (PVP) and Zirconium oxide (ZrO2) were chosen. The influence of the monolayer and bilayer gates insulator on OFET performance was investigated. MATLAB software was used to simulate and determine the electrical characteristics of a device. The output and transfer characteristics were studied for ZrO2, PVP and ZrO2/PVP as an organic gate insulator layer. Both characteristics show a high drain current at the gate dielectric ZrO2/PVP equal to -0.0031A and -0.0015A for output and transfer characteristics respectively

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