Preferred Language
Articles
/
WBZ9tIcBVTCNdQwC_lxW
Structural and Electrical Properties Dependence on annealing temperature of a-Ge: Sb/c-Si Heterojunction
...Show More Authors

Publication Date
Sat Apr 30 2022
Journal Name
Iraqi Journal Of Science
The Effect of Silver Oxide on the Structural and Optical Properties of ZnO: AgO Thin Films
...Show More Authors

Compounds from ZnO doped with AgO in different ratio (0,3,5,7, and 9)wt.% were prepared.Thin films from the prepared compounds were deposited on a glass substrate using the pulsed laser deposition method. The XRD pattern confirmed the presence of a single-phase hexagonal wurtzite ZnO structure, without the presence of a secondary phase. AFM measurements showed an increase in both average grain size and average surface roughness with increasing concentration content of (AgO).The crystallite size of ZnO of the main peak corresponding to the preferred plane of crystal growth named (100) increases from 17.8 to 22.5nm by increasing of AgO doping ratio  from 0 to 9%. The absorbance and transmittance in the wavelength range (350-1100 nm)

... Show More
View Publication
Scopus (13)
Crossref (6)
Scopus Crossref
Publication Date
Sat Jul 01 2023
Journal Name
Chemical Methodologies
Acid Activation of Iraqi Bentonite Clay and Studying its Structural, Dielectric and Electrical Behavior at Various Temperatures
...Show More Authors

Iraqi calcium bentonite was activated via acidification to study its structural and electrical properties. The elemental analysis of treated bentonite was determined by using X-ray fluorescence while the unit crystal structure was studied through X-ray diffraction showing disappearance of some fundamental reflections due to the treatment processes. The surface morphology, on the other hand, was studied thoroughly by Scanning Electron microscopy SEM and Atomic Force Microscope AFM showing some fragments of montmorillonite sheets. Furthermore, the electrical properties of bentonite were studied including: The dielectric permittivity, conductivity, tangent loss factor, and impedance with range of frequency (0.1-1000 KHz) at different temperatu

... Show More
Publication Date
Wed Sep 01 2010
Journal Name
Materials & Design
Influence of glass addition and sintering temperature on the structure, mechanical properties and dielectric strength of high-voltage insulators
...Show More Authors

View Publication
Scopus (15)
Crossref (11)
Scopus Clarivate Crossref
Publication Date
Sat Mar 01 2008
Journal Name
Iraqi Journal Of Physics
Influence of Gold Concentration on the Main Detection Parameters of Ge-Au Photoconductive Detector
...Show More Authors

Ge-Au infrared photoconductive detection was prepared from germanium single crystal which were doped with different gold concentration using thermal evaporation. The spectral resonsivity (Rλ), spectral detectivity (D*) were determined as function of wavelength, also the resistance, conductivity in dark and with illumination to infrared radiation, the gain and relative photo response have been measured with different gold concentration. Remarkable improvements in the photoresponse gain were observed for the highest resistance specimen at the expense of spectral detectivity values.

View Publication Preview PDF
Publication Date
Wed Dec 18 2019
Journal Name
Bulletin Of Materials Science
Investigation of optical properties and glass transition temperature of nano-epoxy matrix
...Show More Authors

View Publication
Scopus (2)
Crossref (3)
Scopus Clarivate Crossref
Publication Date
Mon Sep 20 2021
Journal Name
Key Engineering Materials
The Effect of Quantum Confinement on Optical Properties of CdSe Quantum Dots at Room Temperature
...Show More Authors

CdSe quantum dots possess a tuning energy gap which can control gap values according to the size of the quantum dots, this is made the material able to absorb the wavelengths within visible light. A simple model is provided for the absorption coefficient, optical properties, and optical constants for CdSe quantum dots from the size 10nm to 1nm with the range of visible region between (300-730) nm at room temperature. It turns out that there is an absorption threshold for each wavelength, CdSe quantum dots begin to absorb the visible spectrum of 1.4 nm at room temperature for a wavelength of 300 nm. It has been noted that; when the wavelength is increased, the absorption threshold also increases. This applies to the optical propertie

... Show More
View Publication
Crossref
Publication Date
Mon Dec 11 2017
Journal Name
Al-khwarizmi Engineering Journal
The Effects of Long-Term Operation and High Temperature on Material Properties of Austenitic Stainless Steel Type 321H
...Show More Authors

Changes in mechanical properties of material as a result of service in different conditions can be provided by mechanical testing to assist the estimation of current internal situation of these materials, or the degree of deterioration may exist in furnaces serviced at high temperature and exceed their design life. Because of the rarity works on austenitic stainless steel material type AISI 321H, in this work, ultimate tensile strength, yield strength, elongation, hardness, and absorbed energy by impact are evaluated based on experimental data obtained from mechanical testing. Samples of tubes are extracted from furnace belong to hydrotreaterunit, also samples from un-used tube material are used to make comparisons between these properti

... Show More
View Publication Preview PDF
Crossref
Publication Date
Fri Feb 01 2019
Journal Name
Journal Of Physics: Conference Series
Study the Electrical Properties of Carbon Nanotubes/Polyaniline Nanocomposites
...Show More Authors

Several schottky diodes were fabricated from polyaniline/ Carbon nanotube (single and multiwalled) composites. These composites were synthesized with different concentration and two carbon nanotubes types, Single and Multi-Walled Carbon Nanotubes (SWCNT & MWCNT). Aluminum and silver paste were chosen as schottky and ohmic contact respectively. physical and electrical were used to studied these composite by using Atomic Force Microscopy (AFM) and electrical measurements. The Root Mean Square RMS surface roughness of the composite samples was found to be around 4nm. The currentvoltage characteristic were measurements for all samples in the bias range ±15V at room temperature. The results shows the increasing in carbon nanotubes concentration

... Show More
View Publication Preview PDF
Scopus (11)
Crossref (6)
Scopus Clarivate Crossref
Publication Date
Tue Jan 08 2019
Journal Name
Iraqi Journal Of Physics
Some electrical properties of PVA:PEG/MnCl2 thin film composites
...Show More Authors

PVA:PEG/MnCl2 composites have been prepared by adding (MnCl2) to the mixture of the poly vinyl alcohol (PVA) and poly ethylene glycol (PEG) with different weight percentages (0, 2, 4, 6, 8 and 10) wt.% by using casting method. The type of charge carriers, concentration (nH) and Hall mobility (μH) have been estimated from Hall measurements and show that the films of all concentration have a negative Hall coefficient. In D.C measurement increase temperature leads to decrease the electrical resistance. The D.C conductivity of the composites increases with the increasing of the concentration of additive particles and temperature. The activation energy decreases for all composites with increasing the concentration of the additive particles.

... Show More
View Publication Preview PDF
Crossref (2)
Crossref
Publication Date
Mon Dec 01 2014
Journal Name
Aip Advances
Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals
...Show More Authors

Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribu

... Show More
View Publication
Scopus (10)
Crossref (9)
Scopus Clarivate Crossref