Sub-threshold operation has received a lot of attention in limited performance applications.However, energy optimization of sub-threshold circuits should be performed with the concern of the performance limitation of such circuit. In this paper, a dual size design is proposed for energy minimization of sub-threshold CMOS circuits. The optimal downsizing factor is determined and assigned for some gates on the off-critical paths to minimize the energy at the maximum allowable performance. This assignment is performed using the proposed slack based genetic algorithm which is a heuristic-mixed evolutionary algorithm. Some gates are heuristically assigned to the original and the downsized design based on their slack time determined by static tim

This research is presenting a study of optical and structural properties of (Fe2O3)1-x(MgO)x composites synthesized as thin film that can be used as a gas sensor. Pulsed laser deposition technique was used to prepare thin films of (Fe2O3)1-x(MgO)x. The pattern of X-ray diffraction of the composites powder showed the consistency of iron oxide (α-Fe2O3) hematite phase along with the planes (104) and (110) as preferred planes for crystal growth where the intensities of which varied with MgO content. The crystal size of the thin film material was varied in between (26.8-35.1) nm. The diffraction pattern of the pulsed laser deposited thin films was absent from any diffraction peaks. The maximum transparency obtained of hematite

The Ground Penetrating Radar (GPR) is frequently used in pavement engineering
for road pavement inspection. The main objective of this work is to validate
nondestructive, quick and powerful measurements using GPR for assessment of subgrade
and asphalt /concrete conditions. In the present study, two different antennas
(250, 500 MHz) were used. The case studies are presented was carried in University
of Baghdad over about 100m of paved road. After data acquisition and radar grams
collection, they have been processed using RadExplorer V1.4 software
implementing different filters with the most effective ones (time zero adjustment and
DC removal) in addition to other interpretation tool parameters.
The interpretatio

AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by low

AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by

We report about multilayer (TiO2)1-x(WO3)x thin films with various tungsten oxide concentration deposited on glass substrate via pulsed laser deposition (PLD) technique method. The structural, optical and dielectric properties of the prepared thin films were characterized using x-ray diffraction method (XRD) and UV-Visible absorption spectrometry and LRC meter. The x-ray results showed a polycrystalline structure of pristine titanium oxide and the peaks are identical with the rutile phase and trace of the anatase phase. These peaks are identical with titanium oxide and triclinic tungsten oxide as WO3 is added to TiO2 while it was observed that all peaks belong to tungsten oxide at x=1.0. Th

CuInSe2 (CIS)thin films have been prepared by use vacuum thermal evaporation technique, of 750 nm thickness, with rate of deposition 1.8±0.1 nm/sec on glass substrate at room temperature and pressure (10-5) mbar. Heat treatment has been carried out in the range (400-600) K for all samples. The optical properties of the CIS thin films are been studied such as (absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constant)by determined using Measurement absorption and transmission spectra. Results showed that through the optical constants we can made to control it is wide applications as an optoelectronic devices and photovoltaic applications.

In this study, thin films of pure titanium dioxide (TiO2) and titanium dioxide dual mixed with zinc oxide (ZnO) and magnesium oxide (MgO) with varying concentrations of (ZnO: MgO)x ranging from 0 to 30 wt% undoped and doped gold nanoparticles (AuNPs) were prepared on glass using the chemical spray pyrolysis (CSP) technique. The morphological, structural, and sensing properties of the prepared thin films were examined. Atomic Force Microscopy (AFM) analysis revealed that these films exhibit a consistent structure before and after doping. Initially, the roughness of these films was observed to increase upon the introduction of impurities (ZnO: MgO)x. This trend reversed at x=0.20, where a decrease in roughness occurred. Interestingly, a sub