Copper zinc tin sulfide selenide, Cu2 ZnSn(S1−x Se x)4 , absorbers are promising earth-abundant and environmentally benign materials for low-cost photovoltaic applications. This study investigates the structural and optical properties of Cu 2 ZnSn(S1−x Se x)4 nanostructured thin films prepared by pulsed laser deposition using melt-quenched targets with selenium compositions x = 0.0–1.0. X-ray diffraction revealed that films with low selenium content remained amorphous, whereas higher selenium incorporation promoted the formation of polycrystalline kesterite–stannite phases with preferred orientations along (112), (200), (220), and (312). The crystallite size increased from 12.3 to 17.9 nm as selenium reached x = 1.0, indicating enhanced crystal growth. Atomic force microscopy showed composition-dependent surface evolution, where average roughness decreased initially, reached a maximum of 88.29 nm at x = 0.6, and then declined, reflecting structural reorganization during phase transition. Optical characterization by UV–Vis–NIR spectroscopy demonstrated high absorption coefficients exceeding 10 4 cm −1 in the visible region, confirming strong light-harvesting capability. The direct optical band gap was tunable between 2.00 and 2.30 eV, with the highest value observed at x = 0.6 due to quantum confinement, nanoscale disorder, and compositional effects. The refractive index, extinction coefficient, and dielectric constants decreased with selenium addition up to x = 0.6, then increased at higher selenium contents, indicating a strong correlation between composition and optical response. The combined results highlight selenium control as an effective route for tailoring phase stability, transparency, and photon management for devices.
Alloys of GaxSb1-x system with different Ga concentration (x=0.4, 0.5, 0.6) have been prepared in evacuated quartz tubes. The structure of the alloys were examined by X-ray diffraction analysis (XRD) and found to be polycrystalline of zincblend structure with strong crystalline orientation (220). Thin films of GaxSb1-x system of about 1.0 μm thickness have been deposited by flash evaporation method on glass substrate at 473K substrate temperature (Ts) and under pressure 10-6 mbar. This study concentrated on the effect of Ga concentration (x) on some physical properties of GaxSb1-x thin films such as structural and optical properties. The structure of prepared films for various values of x was polycrystalline. The X-ray diffraction analy
... Show MoreThis research is presenting a study of optical and structural properties of (Fe2O3)1-x(MgO)x composites synthesized as thin film that can be used as a gas sensor. Pulsed laser deposition technique was used to prepare thin films of (Fe2O3)1-x(MgO)x. The pattern of X-ray diffraction of the composites powder showed the consistency of iron oxide (α-Fe2O3) hematite phase along with the planes (104) and (110) as preferred planes for crystal growth where the intensities of which varied with MgO content. The crystal size of the thin film material was varied in between (26.8-35.1) nm. The diffraction pattern of the pulsed laser deposited thin films was absent from any diffraction peaks. The maximum transparency obtained of hematite
... Show MoreIn this work ,pure and doped(CdO)thin films with different concentration of V2O5x (0.0, 0.05, 0.1 ) wt.% have been prepared on glass substrate at room temperature using Pulse Laser Deposition technique(PLD).The focused Nd:YAG laser beam at 800 mJ with a frequency second radiation at 1064 nm (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface At first ,The pellets of (CdO)1-x(V2O5)x at different V2O5 contents were sintered to a temperature of 773K for one hours.Then films of (CdO)1-x(V2O5)x have been prepared.The structure of the thin films was examined by using (XRD) analysis..Hall effect has been measured in orded to know the type of conductivity, Finally the solar cell and the effici
... Show More(NiO) 1-x (ZnO) x compounds were prepared with different composition ratios. The compounds were obtained by mixing Nickle oxide and zinc oxide in the appropriate ratio and sintered at 1000°C for six hours. Pulsed laser deposition (PLD) method which is simple and inexpensive method was used to deposit (NiO) 1-x (ZnO) x thin films on glass substrate at ambient temperature. Structural, optical and properties were investigated. The structures investigation obtained from x-ray diffraction showed that the prepared of compound as well as thin films have polycrystalline structure where the diffraction peaks w
structural and electrical of CuIn (Sex Te1-x)2
AlxSb1-x compounds with different aluminum content(x=0.1, 0.3 , 0.5 , 0.7 and 0.9 ) were prepared by mixing the two elements in the appropriate ratios in quartz ampulla which then sealed and put in an oven at 1273 and left 5 hours. The obtained powder were grinded and then pressed in pellets shape which will be the target to prepare thin films samples. AlxSb1-x thin films were synthesized by PLD with ~ 150nm in thickness .The structures of AlxSb1-x powders and thin films were determined using X–ray diffraction. The data revealed that all the prepare AlxSb1-x bulk and thin films have polycrystalline . The results showed that increasing of Al reduced the crystallinity of the prepared samples at the first but then the opposite take pla
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