In this paper, a study was made to determine the properties of Jovian radio bursts emitted at frequency 20.1MHZ. The data were provided from the Radio Jove archive for twelve years (2000-2012) for multi stations. The duration time for Long bursts (L) was (10-30) seconds and for Short bursts (S) was (10-20) seconds. The effect of radio bursts from the Sun and the galactic background were calculated at the same frequency and were found that radio bursts from the Sun will reduce the occurrence probability of Jovian radio bursts much more than radio bursts from the galactic background. The distribution of Jovian radio bursts was different; the occurrence probability with respect to the northern latitudes was more than the southern latitudes.

In this article it is proved experimentally that the photon is a particle that has mass and constant wavelength by explaining the effect of refractive index on the wavelength and the natural mass of photon. It is very difficult to measure the mass of photon, a simple and easy process was proposed in this paper to calculate the mass length of photon in vacuum (Y) and in medium (Y*), by measuring the length of laser beam in air (L_air) and in medium (L_med). A new method was postulated to calculate refractive index by using these relations (n = Y*/Y), and (n = L_med / L_air) which supposed a new theory of light.

The densities and visconsities of solutions of poly(vinyl alcohol)(PVA) molccuar weight (14)kg.mol-1in water up to 0.035%mol.kg-1

In the present work, a program for calculating the coefficients of the Aplanatic Cassegrain Telescope (ACT) system, free from the effects of spherical and coma aberrations, were constructed. In addition, the two-mirrors of the optical system, as aspherical surfaces, were adopted. This means, that the two-equations of the mirrors are assumed to be polynomial function of five even terms only. The numerical method, least-squares curve fitting method to calculate the two-mirror coefficients system, was adopted. For choosing the values and ratios that give the best results, Rayleigh Criterion (Rayleigh Limit), for purpose of comparison and preference, was adopted.

              In this work, pure and doped Vanadium Pentoxide (V₂O₅) thin films with different concentration of TiO₂ (0, 0.1, 0.3, 0.5) wt  were obtained using Pulse laser deposition technique on amorphous glass substrate with thickness of (250)nm. The morphological, UV-Visible and Fourier Transform Infrared Spectroscopy (FT-IR) were studied. TiO₂ doping into V₂O₅ matrix revealed an interesting morphological change from an array of high density pure V₂O₅ nanorods (~140 nm) to granular structure in TiO₂-doped V₂O₅ thin film .Transform Infrared Spectro

Thin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on value

BaTiO3 thin films have been deposited on Si (111) and glass substrates by using pulsed laser deposition technique. The films were characterized by using X-ray diffraction, atomic force microscope and optical transmission spectra. The films growth on Si after annealing at 873K showed a polycrystalline nature, and exhibited tetragonal structure, while on glass substrate no growth was noticed at that temperature. UV-VIS transmittance measurements showed that the films are highly transparent in the visible wavelength region and near-infrared region for sample annealing on glass substrate. The optical gap of the film were calculated from the curve of absorption coefficient (αhν) 2 vs. hν and was found tobe 3.6 eV at substrate temperature 5