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MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF SP DEPOSITED CADMIUM SULPHIDE THIN FILMS
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ABSTRACT: Thin film of CdS has been deposited onto clean glass substrate by using Spray pyrolysis technique. Results of Morphological (AFM) studied; electrical properties and optical conductivity studied are analysis. AFM results show a crystalline nature of the films. From the conductivity measurement at different temperatures, the activation energy of the films was calculated and found to be between 0.188 - 0.124 eV for low temperature regions, and between 1.67-1.19eV for high temperature regions. Hall measurements of electrical properties at room temperature show that the resistivity and mobility of CdS polycrystalline films deposited at 400 C0, were 3.878x103 . cm and 1.302x104cm2/ (V.s), respectively. The electrical conductivity of the films was found to be in the range of 10-4 −10-6 (. cm)-1 with n type of conduction mechanism, which is suitable as optical windows for efficient solar cells.

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Publication Date
Sun Mar 03 2013
Journal Name
Baghdad Science Journal
Study of Nonlinear Refraction and Nonlinear Absorption Coefficients of Different CdS Film Thickness by diode laser
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In the present work, different thicknesses of CdS film were prepared by chemical bath deposition. Z-Scan technique was used to study the nonlinear refractive index and nonlinear absorption coefficients. Linear optical testing were done such as transmission test, and thickness of films were done by the interference fringes (Michelson interferometer). Z-scan experiment was performed at 650nm using CW diode laser and at 532nm wavelength. The results show the effect of self-focusing and defocusing that corresponds with nonlinear refraction n2. The effect of two-photon absorption was also studied, which correspond to the nonlinear absorption coefficient B.

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Publication Date
Fri Feb 01 2019
Journal Name
Journal Of Physics: Conference Series
Study the effect of gamma Irradiation on the Superconducting Properties of HgBaSrCa<sub>2</sub>Cu<sub>3</sub>O<sub>8+δ</sub>
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Publication Date
Tue Oct 01 2024
Journal Name
Journal Of Physics: Conference Series
An investigation into the implications of partial substitution of selenium with lead on the thermal properties for S<sub>60</sub>Se<sub>40-X</sub>Pb<sub>X</sub> Chalcogenide Compound
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Abstract<p>This study includes the manufacture of four ternary alloys represented S<sub>60</sub>Se<sub>40-X</sub>Pb<sub>X</sub> with weight ratios x = 0, 10, 20, and 30 by the melting point method. The components of each alloy were mixed separately, then placed in quartz ampoules and vacuumed out with a vacuum of roger that 10<sup>−4</sup> Torr. The ampule was heated in two stages to avoid sudden dissipation and precipitation of selenium on the inner mass of the quartz tube. The ampoule was gradually heated and kept at 450°C for approximately 4 hours followed by 950°C for 10 hours.at a rate of 10 degrees Celsius, the temperature of the electric furnace</p> ... Show More
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Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
The effect of the Doping with Cobalt Transition Metal on the Dielectric and Structural Properties of Fe<sub>0.5</sub>Co<sub>x</sub>Mg<sub>0.95-x</sub>O Nanoparticles Synthesized by Sol-Gel Assisted Auto-Combustion
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Abstract<p>The compound Fe<sub>0.5</sub>Co<sub>x</sub>Mg<sub>0.95-x</sub>O where (x= 0.025, 0.05, 0.075, 0.1) was prepared via the sol-gel technique. The crystalline nature of magnesium oxide was studied by X-ray powder diffraction (XRD) analysis, and the size of the sample crystals, ranging between (16.91-19.62nm), increased, while the lattice constant within the band (0.5337-0.4738 nm) decreased with increasing the cobalt concentration. The morphology of the specimens was studied by scanning electron microscopy (SEM) which shows images forming spherical granules in addition to the presence of interconnected chips. The presence of the elements involved in the super</p> ... Show More
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Publication Date
Mon Aug 19 2024
Journal Name
Journal Of Metastable And Nanocrystalline Materials
The Structural, Magnetic, and Electrochemical Properties of Composite PAni/Co&lt;sub&gt;0.2&lt;/sub&gt;Mn&lt;sub&gt;0.8&lt;/sub&gt;Fe&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt;
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The current work concerns preparing cobalt manganese ferrite (Co0.2Mn0.8Fe2O4) and decorating it with polyaniline (PAni) for supercapacitor applications. The X-ray diffraction findings (XRD) manifested a broad peak of PAni and a cubic structure of cobalt manganese ferrite with crystal sizes between 21 nm. The pictures were taken with a field emission scanning electron microscope (FE-SEM), which evidenced that the PAni has nanofibers (NFs) structures, grain size 33 – 55 nm, according to the method of preparation, where the hydrothermal method was used. The magnetic measurements (VSM) that were conducted at room temperature showed that the samples had definite magnetic properties. Additionally, it was noted that the saturation magnetizatio

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Publication Date
Fri Feb 01 2019
Journal Name
Journal Of Physics: Conference Series
Manufacturing and studying the effect of partial substitution on the properties of the compound Bi<sub>2-x</sub> Ag<sub>x</sub>Sr<sub>1.9</sub>Ba<sub>0.1</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>10+δ</sub> superconductors.
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Publication Date
Wed Feb 20 2019
Journal Name
Iraqi Journal Of Physics
Preparation of polyaniline polymer and using it as a Vapor sensor of acids
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 Polyaniline organic Semiconductor polymer was prepared by oxidation polymerization by adding hydrochloric acid concentration of 0.1M and potassium per sulfate concentration of 0.2M to 0.1M of aniline at room temperature, the polymer was deposited at glass substrate, the structural and optical properties were studies through UV-VIS, IR, XRD measurements, films have been operated as a sensor of vapor  H2SO4 and HCl  acids.

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Publication Date
Wed Nov 04 2015
Journal Name
Eng. &tech. Journal
Photoconductivity and Performance of Mn2+ and Ce3+ Doped ZnS Quantum Dot Detectors
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Mn2+ and Ce3+ Doped ZnS nanocrystals were prepared by a simple microwave irradiation method under mild condition. The starting materials for the synthesis of Mn2+ and Ce3+ Doped ZnS P nanocrystals were zinc acetate as zinc source, thioacetamide as a sulfur source, manganese chloride and Cerium chloride as manganese and cerium sources respectively (R & M Chemical) and ethylene glycol as a solvent. All chemicals were analytical grade products and used without further purification. The nanocrystals of Mn2+ and Ce3+ Doped ZnS P with cubic structure were characterized by X-ray powder diffraction (XRD), the morphology of the film is seen by field effect scanning electron microscopy (FESEM). The composition of the samples is analyzed by EDS. The s

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Publication Date
Sun Mar 07 2010
Journal Name
Baghdad Science Journal
Hypercyclictty and Countable Hypercyclicity for Adjoint of Operators
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Let be an infinite dimensional separable complex Hilbert space and let , where is the Banach algebra of all bounded linear operators on . In this paper we prove the following results. If is a operator, then 1. is a hypercyclic operator if and only if D and for every hyperinvariant subspace of . 2. If is a pure, then is a countably hypercyclic operator if and only if and for every hyperinvariant subspace of . 3. has a bounded set with dense orbit if and only if for every hyperinvariant subspace of , .

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Publication Date
Tue Dec 01 2009
Journal Name
Iraqi Journal Of Physics
Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements
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Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements. The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon. The experimental data of the conduction band offset Ec and valence band offset Ec were compared with theoretical values. The band offset Ec=530meV and Ev=770meV obtained at 300K. The energy band diagram of p-CdS/n-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-2-V plot

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