In this paper, the concept of semi-?-open set will be used to define a new kind of strongly connectedness on a topological subspace namely "semi-?-connectedness". Moreover, we prove that semi-?-connectedness property is a topological property and give an example to show that semi-?-connectedness property is not a hereditary property. Also, we prove thate semi-?-irresolute image of a semi-?-connected space is a semi-?-connected space.

Throughout this paper R represents commutative ring with identity, and M is a unitary left R-module. The purpose of this paper is to study a new concept, (up to our knowledge), named a semi-extending modules, as generalization of extending modules, where an Rmodule M is called semi-extending if every sub module of M is a semi-essential in a direct summand of M. Various properties of semi-extending module are considered. Moreover, we investigate the relationships between semi-extending modules and other related concepts, such as CLS-modules and FI- extending modules.

Let  be a commutative ring with 1 and  be left unitary  . In this paper we introduced and studied concept of semi-small compressible module (a     is said to be semi-small compressible module if  can be embedded in every nonzero semi-small submodule of . Equivalently,  is  semi-small compressible module if there exists a monomorphism  , ,     is said to be semi-small retractable module if  , for every non-zero  semi-small sub module in . Equivalently,  is semi-small retractable if there exists a homomorphism  whenever  .     In this paper we introduce and study the concept of semi-small compressible and semi-small retractable s as a generalization of compressible  and retractable  respectively and give some of their adv

This paper deal with the estimation of the shape parameter (a) of Generalized Exponential (GE) distribution when the scale parameter (l) is known via preliminary test single stage shrinkage estimator (SSSE) when a prior knowledge (a₀) a vailable about the shape parameter as initial value due past experiences as well as suitable region (R) for testing this prior knowledge.

The Expression for the Bias, Mean squared error [MSE] and Relative Efficiency [R.Eff(×)] for the proposed estimator are derived. Numerical results about beha

Let M be a n-dimensional manifold. A C1- map f : M  M is called transversal if for all m N the graph of fm intersect transversally the diagonal of MM at each point (x,x) such that x is fixed point of fm. We study the minimal set of periods of f(M per (f)), where M has the same homology of the complex projective space and the real projective space. For maps of degree one we study the more general case of (M per (f)) for the class of continuous self-maps, where M has the same homology of the n-dimensional sphere.

Relation on a set is a simple mathematical model to which many real-life data can be connected. A binary relation  on a set  can always be represented by a digraph. Topology on a set  can be generated by binary relations on the set . In this direction, the study will consider different classical categories of topological spaces whose topology is defined by the binary relations adjacency and reachability on the vertex set of a directed graph. This paper analyses some properties of these topologies and studies the properties of closure and interior of the vertex set of subgraphs of a digraph. Further, some applications of topology generated by digraphs in the study of biological systems are cited.

The main purpose of this paper is to study feebly open and feebly closed mappings and we proved several results about that by using some concepts of topological feebly open and feebly closed sets , semi open (- closed ) set , gs-(sg-) closed set and composition of mappings.

A single-crystalline semi-polar gallium nitride (11-22) was grown on m-plane (10-10) sapphire substrate by metal organic chemical vapor deposition. Three-step approach was introduced to investigate the grain size evolution for semi-polar (11-22) GaN. Such approach was achieved due to the optimized gallium to ammonia ratio and temperature variations, which led to high quality (11-22) oriented gallium nitride epilayers. The full width at half maximum values along (-1-123) and (1-100) planes for the overgrowth temperature of 1080°C were found to be as low as 0.37° and 0.49°, respectively. This was an indication of the enhanced coalescence and reduction in root mean square roughness as seen by atomic force microscopy. Surface analysi