In this work, (Cu1-xAgx)2ZnSnSe4 (CAZTSe) alloys with various silver content (x= 0.0, 0.1and 0.2) have been prepared by reacting their high purity elements (Cu, Ag, Zn, Sn and Se) in an evacuated quartz tube under pressure of 10 -3Torr. The composition of the prepared alloys was determined by energy dispersive X-ray spectroscopy (EDXS) analysis, the results were close to the theoretical values. CAZTSe thin films with a thickness of 800 nm were deposited by thermal evaporation technique on glass substrates at room temperature (RT) with a deposition rate of 0.53nm/sec. Similarly, CdS thin films were deposited with a thickness of 100 nm on the same substrates at RT with a deposition rate of 0.3nm/sec from ready-made CdS alloy powder. All prepared thin films were annealed at temperatures of 373K and 473K under vacuum (10-3Torr) for 1h. X-ray analysis showed that all CAZTSe alloys and their thin films were polycrystalline and have the tetragonal structure with preferential orientation in the (112) direction, while all thin CdS films were polycrystalline and have the hexagonal structure with preferential orientation in the (002) direction. The scanning electron microscopy (SEM) technique was used to study the surface morphology of all prepared CAZTSe films, while the atomic force microscopy (AFM) technique was used to study the surface topography of all prepared CAZTSe and CdS films. SEM results revealed that CAZTSe films had uniform surface features with irregular sized grains, while AFM results showed that the surface roughness and the average grain size of CAZTSe and CdS thin films increased with increasing Ag content for CAZTSe thin films and annealing temperature for CAZTSe and CdS thin films. The absorbance and transmittance spectra for CAZTSe and CdS thin films were recorded in the wavelength ranges of (400-1100) nm and (350- 1100) nm, respectively. Optical measurements showed that all CAZTSe and CdS thin films have a direct energy gap (Eg) that decreased with increasing silver content for CAZTSe thin films and annealing temperature (Ta) for both types of prepared thin films, so it decreased from 1.73 eV to1.5 eV when x content increased from 0.0 to 0.2 and decreased from 1.5 eV to1.46 eV and from 2.47 eV to 2.38 eV when Ta increased from RT to 473K for CAZTSe thin films with x content equal to 0.2 and CdS thin films, respectively. Optical constants such as extinction coefficient, refractive index and dielectric constant were calculated for all prepared thin films. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Ag content for CAZTSe thin films and annealing temperature for both types of thin films. So the electrical conductivity changed from 1.1276*10-2 (Ω.cm)-1 to 28.9266*10-2 (Ω.cm)-1 when x changed from 0.0 to 0.2 and changed from 28.9266*10-2 (Ω.cm)-1 to 57.4599*10-2 (Ω.cm)-1 and from 4.0476*10-4 (Ω.cm)-1 to 9.4227*10-4 (Ω.cm)-1 when Ta changed from RT to 473K for CAZTSe thin films with Ag content equal to 0.2 and CdS thin films, respectively. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (318-488)K and (313-443)K for CAZTSe and CdS films, respectively. The results of Hall effect for CAZTSe thin films showed that all films were of acceptor type and the concentration of holes in them decreased with increasing silver content and annealing temperature, while CdS thin films were of donor type and the concentration of electrons in them increased with increasing annealing temperature. In this research, solar cells were fabricated from CdS/CAZTSe/Si structurThe C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance and carrier concentration reduced while the width of depletion region and the built-in potential increased with increasing the silver content and annealing temperature. The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While,The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Ag content and annealing temperature. The result indicated that the prepared solar cell with 0.2 Ag content and 473K annealing temperature exhibited the highest efficiency (η = 2.827%) compared to other prepared solar cells
Abstract
In order to determine what type of photovoltaic solar module could best be used in a thermoelectric photovoltaic power generation. Changing in powers due to higher temperatures (25oC, 35oC, and 45oC) have been done for three types of solar modules: monocrystalline , polycrystalline, and copper indium gallium (di) selenide (CIGS). The Prova 200 solar panel analyzer is used for the professional testing of three solar modules at different ambient temperatures; 25oC, 35oC, and 45oC and solar radiation range 100-1000 W/m2. Copper indium gallium (di) selenide module has the lowest power drop (with the average percent
... Show MoreThe aquatic crude extract of Silybum marianum dry grains prepared by melting them in distil water by the method of soak and shake. The effect of Silybum marianum crude extract studied in vitro on three tumor cell line the Hep-2, AMN-3 and RD for 24, 48 and 72 hours of exposure, and one cell line of normal cells REF for 72 hr exposure. The results showed that the prescence of toxic effect of the aquatic crude extract on the cell lines of Hep-2, AMN-3 and RD at 10 and 100 µg/ ml upto the higher concentrations when they exposed to the extract for 48 hr. as compared with the control treatment, and when the exposure period increased to 72 hr. the toxic effect started at low concentrations (5 and 10 µg/ ml) as compared with the control g
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novel spectrofluorimetric flow injection analysis (FIA) method was developed for the selective quantification of ascorbic acid via fluorescence quenching of serotonin hydrochloride. The system employs a custom-designed photometric array comprising 16 irradiation sources arranged in a dual-axis matrix—eight aligned horizontally and eight orthogonally, enabling multi-angle excitation and enhanced spectral resolution. Fluorescence signals were captured using a twin-pair solar cell detector, offering high sensitivity and minimal optical interference. The method exhibited a linear calibration range of 0.1–30 limit of detection (LOD) of 0.025 μ μ g/mL with a correlation coefficient (r mol /L, equivalent to 4.403 * 10 4 μ 2 ) of 0.9966, a g
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In This research a Spectroscopic complement and Thermodynamic properties for molecule PO2 were studied . That included a calculation of potential energy . From the curve of total energy for molecule at equilibrium distance , for bond (P-O), the degenerated of bond energy was (4.332eV) instate of the vibration modes of ( PO2 ) molecule and frequency that was found active in IR spectra because variable inpolarization and dipole moment for molecule. Also we calculate some thermodynamic parameters of ( PO2 ) such as heat of formation , enthalpy , heat Of capacity , entropy and gibb's free energy Were ( -54.16 kcal/mol , 2366.45 kcal/mol , 10.06 kcal /k/mol , 59.52 k
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This work represents the preparation of the starting material, 3-chloro-2-oxo-1,4-dithiacyclohexane (S) using a new method. This material was reacted with, 4-phenylthiosemicarbazide to give (H3NS3) as a tetradentate ligand H3L. New complex of rhenium (V) with this ligand of the formula [ReO(L)] was prepared. New complexes of the general formula [M(HL)] of this ligand when reacted with some metal ions where: M = Ni(II), Cu(II), Cd(II), Zn(II), Hg(II) have been reported. The ligand and the complexes were characterized by infrared, ultraviolet–visible, mass, 1H nuclear magnetic resonance and atomic absorption spectroscopic techniques and by (HPLC), elemental analysis, and electrical conductivity. The proposed structure for H3L with Re (V) i
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The reaction of 2-amino benzoic acid with 1,2-dichloroethane under reflux in methanol and KOH as a base to gave the precursor [H4L]. The precursor under reflux and drops of CH3COOH which reacted with (2mole) from salicycaldehyde in methanol to gave a new type N2O4 ligand [H2L], this ligand was reacted with (MCl2) Where [M= Co (II), Ni(II), Cu(II) and Zn(II)] in (1:1) ratio at reflux in methanol using KOH as a base, to give complexes of the general formula [M(L)]. All compounds have been characterized by spectroscopic methods [1H NMR ( just to the ligand), FTIR, uv-vis, atomic absorption], melting point, conductivity, chloride content, as well as m
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The reaction of 2-amino benzoic acid with 1,2-dichloroethane under reflux in methanol and KOH as a base to gave the precursor [H4L]. The precursor under reflux and drops of CH3COOH which reacted with (2mole) from salicycaldehyde in methanol to gave a new type N2O4 ligand [H2L], this ligand was reacted with (MCl2) Where [M= Co (II), Ni(II), Cu(II) and Zn(II)] in (1:1) ratio at reflux in methanol using KOH as a base, to give complexes of the general formula [M(L)]. All compounds have been characterized by spectroscopic methods [1H NMR ( just to the ligand), FTIR, uv-vis, atomic absorption], melting point, conductivity, chloride content, as well as magnetic susceptibility measurements. From the above data, the proposed molecular structu
... Show MoreIn this work, porous Silicon structures are formed with photochemical etching process of n-type Silicon(111) wafers of resistivity (0.02.cm) in hydrofluoric acid (HF) of concentration (39%wt) under light source of tungeston halogen lamp of (100 Watt) power. Samples were anodized in a solution of 39%HF and ethanol at 1:1 for 15 minutes. The samples were realized on n-type Si substrates Porous Silicon layers of 100m thickness and 30% of porousity. Frequency dependence of conductivity for Al/PSi/Si/Al sandwich form was studied. A frequency range of 102-106Hz was used allowing an accurate determination of the impedance components. Their electronic transport parameters were determined using complex impedance measurements. These measu
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