In this study, the response and behavior of machine foundations resting on dry and saturated sand was investigated experimentally. A physical model was manufactured to simulate steady state harmonic load at different operating frequencies. The effect of relative density, depth of embedment, foundation area as well as the imposed harmonic load was investigated. It was found that the amplitude of displacement of the foundation increases with increasing the amplitude of dynamic force and operating frequency meanwhile it decreases with increasing the relative density of sand, degree of saturation, depth of embedment and contact area of footing. The maximum displacement was noticed at 33.34 to 41.67 Hz. The maximum displaceme

In this paper, numerical and experimental studies on the elastic behavior of glass fiber reinforced ‎polymer (GFRP) with stiffeners in the GFRP section's web (to prevent local buckling) are presented. ‎The GFRP profiles‎ were connected to the concrete deck slab by shear connectors. Two full-scale simply supported ‎composite beams (with and without stiffeners) were tested under impact load (three-point load) to ‎assess its structural response. The results ‎proved that the maximum impact force, maximum ‎deflection, damping time, and ‎damping ratio of the composite beam were affected by the GFRP ‎stiffeners‎. The experimental results indicated that the damping ratio and deflection were diminished compare

The research aims to identify the strengths and weaknesses in communication skills and decision-making among managers of the Faculty of Physical Education - University of Baghdad from the perspective of staff and faculty members. May be the research community to all employees (faculty and staff) all in the Faculty of Physical Education - Baghdad University for the academic year 2012-2013 and totaling 208 faculty members and 123 staff members, has been selected a random sample of members of the faculty's (100 ) and employees (50) and distributed them to identify the study and collecting them (75) The identification of the faculty and (40) of the staff, and ruled out (35) to identify the lack of validity. After having identified researcher co

This paper is concerned with introducing and studying the first new approximation operators using mixed degree system and second new approximation operators using mixed degree system which are the core concept in this paper. In addition, the approximations of graphs using the operators first lower and first upper are accurate then the approximations obtained by using the operators second lower and second upper sincefirst accuracy less then second accuracy. For this reason, we study in detail the properties of second lower and second upper in this paper. Furthermore, we summarize the results for the properties of approximation operators second lower and second upper when the graph G is arbitrary, serial 1, serial 2, reflexive, symmetric, tra

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         The research aims to measure the impact of infor

In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitancesemiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.

In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitance semiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.