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Photodetector based on Rutile and Anatase TiO<sub>2</sub> nanostructures/n-Si Heterojunction
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Photodetector based on Rutile and Anatase TiO2 nanostructures/n-Si Heterojunction

Publication Date
Thu Nov 01 2018
Journal Name
Journal Of Economics And Administrative Sciences
Estimate size sub-population by Killworth method
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The aim of the thesis is to estimate the partial and inaccessible population groups, which is a field study to estimate the number of drug’s users in the Baghdad governorate for males who are (15-60) years old.

Because of the absence of data approved by government institutions, as well as the difficulty of estimating the numbers of these people from the traditional survey, in which the respondent expresses himself or his family members in some cases. In these challenges, the NSUM Network Scale-Up Method Is mainly based on asking respondents about the number of people they know in their network of drug addicts.

Based on this principle, a statistical questionnaire was designed to

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Publication Date
Wed Jan 01 2025
Journal Name
Iraqi Journal Of Materials
Silicon Nitride Nanostructures Prepared from n-type and p-type Silicon Targets
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Silicon nitride nanostructures were prepared by reactive sputtering technique using silicon targets with different types of electrical conductivity (n-type and p-type) and Ar:N2 gas mixing ratio of 70:30. The optical microscopy and spectroscopic characteristics of these films were determined in order to introduce the effect of target conductivity type on these characteristics. The results showed that using p-type silicon target would produce Si3N4 films with lower tendency to adsorb water vapor and other constituents of the atmospheric air, higher absorbance in the visible range 400-700nm, and lower variation in the energy band gap with film thickness than the Si3N4 films prepared from n-type silicon target.

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Publication Date
Tue Dec 31 2024
Journal Name
International Area Studies Review
Sub-National Governments’ Interactions in International Affairs: An Arab Perspective on Paradiplomacy
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In the last years of the twentieth century, scholars solidly focused on paradiplomacy as a study subject, linking it to federalism and decentralised systems. In the Arab world, which has 22 countries, a few states have adopted federalism or decentralisation. Only five countries, i.e., 22.7%, have adopted federalism and decentralised experience. Therefore, limited research and academic work has been conducted regarding paradiplomacy. This paper aims to research the relationship between federalism and paradiplomacy conceptually and practically and then analyse the Arab experiences in federalism and whether they applied paradiplomacy and succeeded in doing so. To explore that, the paper studies and compares the related articles of constitution

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Publication Date
Tue Dec 31 2024
Journal Name
International Area Studies Review
Sub-National Governments’ Interactions in International Affairs: An Arab Perspective on Paradiplomacy
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In the last years of the twentieth century, scholars solidly focused on paradiplomacy as a study subject, linking it to federalism and decentralised systems. In the Arab world, which has 22 countries, a few states have adopted federalism or decentralisation. Only five countries, i.e., 22.7%, have adopted federalism and decentralised experience. Therefore, limited research and academic work has been conducted regarding paradiplomacy. This paper aims to research the relationship between federalism and paradiplomacy conceptually and practically and then analyse the Arab experiences in federalism and whether they applied paradiplomacy and succeeded in doing so. To explore that, the paper studies and compares the related articles of constitution

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Publication Date
Sun Jan 01 2023
Journal Name
Aip Conference Proceedings
E-small prime sub-modules and e-small prime modules
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Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Fabrication and characterization of n-InSb Heterojunction for optoelectronic device
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The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-InSb heterjuntion were successfully fabricated on p-Si substrates by thermal evaporation technique at different annealing temperature (as prepared, 400,500,600) °C. The effect of annealing temperature on the structural, surface morphology, optical and optoelectronic properties of InSb films were investigated and studied. The crystal structure of the film was characterized by X-ray diffraction and techniques. AFM techniques inspect the surface morphology of InSb films, the study presented the val

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Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Fabrication and characterization of n- InSb Heterojunction for optoelectronic device
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Publication Date
Sun Jan 06 2019
Journal Name
Progress In Industrial Ecology – An International Journal,
Effect of V, In and Cu doping on properties of p-type ZnSe/Si heterojunction solar cell
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The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10–5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after

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Publication Date
Tue Jan 01 2019
Journal Name
Progress In Industrial Ecology, An International Journal
Effect of V, In and Cu doping on properties of p-type ZnSe/Si heterojunction solar cell
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Publication Date
Mon Jan 01 2018
Journal Name
Journal Of Engineering And Applied Sciences
sEffect of Sb doping on CuAlSe2 thin films and their behavior on the preparation CuAlSe2/Si heterojunction solar cells
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