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Impact of Copper Doping on Nanocrystalline SnO<sub>2</sub> Thin Films Synthesized by Sol-Gel Coating and Chemical Bath Deposition for Gas Sensor Applications
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This work focuses on the preparation of pure nanocrystalline SnO2 and SnO2:Cu thin films on cleaned glass substrates utilizing a sol-gel spin coating and chemical bath deposition (CBD) procedures. The primary aim of this study is to investigate the possible use of these thin films in the context of gas sensor applications. The films underwent annealing in an air environment at a temperature of 500 C for duration of 60 minutes. The thickness of the film that was deposited may be estimated to be around 300 nm. The investigation included an examination of the structural, optical, electrical, and sensing characteristics, which were explored across various preparation circumstances, specifically focusing on varied concentrations of Cu-doping (2, 4, and 6 wt.%). The deposited films were analyzed by several techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical absorption spectroscopy. The films generated by the spin coating method had a tetragonal rutile structure, while the films created via the chemical bath deposition (CBD) technique displayed both tetragonal rutile and orthorhombic structures. The spin coating technique was used to make films of several weight percentages (0, 2, 4, and 6 wt.%). The resulting crystallite sizes were examined and found to be 23 nm, 18 nm, 14 nm, and 10.5 nm, respectively. Similarly, films made using the chemical bath deposition (CBD) method exhibited crystallite sizes of 22, 13.9, 9.3, and 8.15 nm, respectively. The obtained findings from atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses indicate a consistent trend whereby, as the concentration of Cu-doped material rises, there is a decrease in the average grain size. The transmittance and absorbance spectra were examined within the wavelength range of 300 to 1000 nm. The films generated by both approaches exhibit a significant level of light transmission throughout the visible spectrum. The bandgap energy of spin coating and CBD films decreases with increasing Cu-doped concentrations; the values were (3.88, 3.8, 3.68, and 3.63) eV and (3.8, 3.78, 3.66, and 3.55) eV, respectively. The electrical characteristics of the films include direct current (DC) electrical conductivity, which indicates the presence of two activation energies, Ea1 and Ea2. These activation energies exhibit an upward trend when the concentration of Cu doping is increased. The films were examined for their ability to detect carbon monoxide (CO) gas at a concentration of about 50 ppm at normal room temperature conditions. The sensitivity of the films to carbon monoxide (CO) gas was assessed at various time intervals and temperatures. The results indicated that the film generated using spin coating exhibited a notably high sensitivity at a temperature of 200 °C, while the film prepared using the chemical bath deposition (CBD) approach had heightened sensitivity at a temperature of 150 °C. Keywords: Spin coating, SnO2 thin films, CBD, AFM, XRD, gas sensor.

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Publication Date
Thu Jan 07 2016
Journal Name
International Journal Of Innovative Research In Science, Engineering And Technology
Effect Of heat Treatment On The Optical Properties Of CuInSe2 Thin Films
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CuInSe2 (CIS)thin films have been prepared by use vacuum thermal evaporation technique, of 750 nm thickness, with rate of deposition 1.8±0.1 nm/sec on glass substrate at room temperature and pressure (10-5) mbar. Heat treatment has been carried out in the range (400-600) K for all samples. The optical properties of the CIS thin films are been studied such as (absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constant)by determined using Measurement absorption and transmission spectra. Results showed that through the optical constants we can made to control it is wide applications as an optoelectronic devices and photovoltaic applications.

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Publication Date
Sun Dec 03 2017
Journal Name
Baghdad Science Journal
Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation
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CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

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Publication Date
Thu Dec 01 2011
Journal Name
Iraqi Journal Of Physics
Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method
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In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40.
The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x  40 and annealing temperature (Ta)<200°C. the temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As:H films.
We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.

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Publication Date
Fri Nov 01 2024
Journal Name
Semiconductors
Effect of ZnO Doping on the Humidity Sensing Properties of the PVDF/PVA Polymeric Blend Films
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Publication Date
Tue Jul 01 2008
Journal Name
Arabian Journal Of Geosciences
Sub-surface geometry of Ar Rika and Ruwah faults from gravity and magnetic surveys
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Publication Date
Wed Oct 01 2014
Journal Name
2014 44th European Microwave Conference
A low magnetic bias sub-millimetre wave semiconductor junction circulator
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Publication Date
Fri Jun 27 2025
Journal Name
International On Applied Innovations In It (icaiit)
Green-Synthesized Calcium Oxide Nanoparticles for Adsorption, Antibacterial Applications, and Alleviating Water Stress in Fenugreek
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In this research, a novel synthesis of CaONPs has been developed via an environmentally friendly, green method. Garlic extract (Allium sativum) was used as a green-reducing and stabilizing agent for CaONPs. The average particle size of CaONPs was approximately 24.42 nm. The synthesized CaONPs were identified by using Fourier transform infrared (FT-IR) spectroscopy, U.V.-vis spectrum, X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Transmission Electron Microscopy, transmission electron microscopy (TEM), Energy Dispersive X-ray spectroscopy (EDX), Atomic Force Microscopy (AFM), and zeta potential (Zp) analysis. The current study highlights the notable applications for CaONPs. First, an antimicrobial assay revea

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Publication Date
Thu Jan 01 2026
Journal Name
Aip Conference Proceedings
Influence of selenium on physical properties of ZnTe thin films
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Publication Date
Sun Sep 07 2014
Journal Name
Baghdad Science Journal
Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films
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In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and

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Publication Date
Fri May 15 2015
Journal Name
Journal Of Chemical, Biological And Physical Sciences
Electrical Properties of Tin Sulphide Thin Films
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In this study, SnS thin films were deposited onto glass substrate by thermal evaporation technique at 300K temperature. The SnS films have been prepared with different thicknesses (100,200 &300) nm. The crystallographic analysis, film thickness, electrical conductivity, carrier concentration, and carrier mobility were characterized. Measurements showed that depending on film thickness. The D.C. conductivity increased with increase in film thickness from 3.720x10-5 (Ω.cm)-1 for 100 nm thickness to 9.442x10-4 (Ω.cm)-1 for 300 nm thicknesses, and the behavior of activation energies, hall mobility, and carrier concentration were also studied.